Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. P. Tilly"'
Autor:
J. O. Chu, Francoise K. LeGoues, Bernard S. Meyerson, L. P. Tilly, F. Cardone, Patricia M. Mooney, Christopher P. D'Emic
Publikováno v:
Journal of Applied Physics. 82:688-695
Two shallow hole traps dominate the deep level transient spectroscopy (DLTS) data for strain-relaxed Si0.7Ge0.3 layers grown on Si(100) by ultrahigh vacuum chemical vapor deposition at temperatures ⩽560 °C. The trap energy levels are at Ev+0.06 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5b0fff672a06c8af9b26372b3d6d55
https://doi.org/10.1063/1.365599
https://doi.org/10.1063/1.365599
Publikováno v:
Physical Review B. 55:13058-13061
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959bac566ff9057f827c76edb92e7c08
https://doi.org/10.1103/physrevb.55.13058
https://doi.org/10.1103/physrevb.55.13058
Publikováno v:
Physical Review B. 47:1249-1255
High-purity In 0.53 Ga 0.47 As lattice matched to InP was grown by liquid-phase epitaxy and used for the study of Cu-related defects. The samples had a free-electron carrier concentration of n=5.0×10 14 cm -3 and an electron mobility of μ 77 K =44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a743ead58da213b3d21fd9307c5da6f8
https://doi.org/10.1103/physrevb.47.1249
https://doi.org/10.1103/physrevb.47.1249
Publikováno v:
Journal of Applied Physics. 68:2158-2163
Liquid‐phase epitaxy allows SiGe alloys of good quality to be grown on Si substrates. We deposit single crystalline, n‐type Si1−xGex films with 0.7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98e87b7cc2fbe1febcc3d3f1f9674dca
https://doi.org/10.1063/1.346572
https://doi.org/10.1063/1.346572
Publikováno v:
Applied Physics Letters. 67:2488-2490
Near band‐gap photoluminescence was observed at low temperatures from relaxed Si1−xGex layers with 0.17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a56426e5a5b3d348a506e671fd7f02b7
https://doi.org/10.1063/1.114617
https://doi.org/10.1063/1.114617
Autor:
M. Gerling, L. P. Tilly
Publikováno v:
Applied Physics Letters. 62:2839-2841
Low‐temperature photoluminescence measurements have been used to study the evolution of the Cu‐acceptor level in In0.53Ga0.47As as a function of hydrostatic pressure. In the pressure range up to 37 kbar the Cu related emission closely tracks the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcebeeef01ab431b6c0569983ee72de0
https://doi.org/10.1063/1.109227
https://doi.org/10.1063/1.109227