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Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Metallic interconnect layers in a standard 65 nm CMOS back-end-of-line (BEOL) process are leveraged to form vertically oriented non-volatile (NV) nano-electromechanical (NEM) switches for compact implementation of hybrid CMOS-NEM integrated circuits.
Publikováno v:
Journal of Physics: Conference Series. 1052:012045
Publikováno v:
Journal of Physics: Conference Series; 2018, Vol. 1052 Issue 1, p1-1, 1p