Zobrazeno 1 - 10
of 22
pro vyhledávání: '"L. P. Porokhovnichenko"'
Autor:
V. V. Silantiev, Ya. M. Gutak, M. Tichomirowa, A. V. Kulikova, A. S. Felker, M. N. Urazaeva, L. G. Porokhovnichenko, E. V. Karasev, A. S. Bakaev, V. V. Zharinova, M. A. Naumcheva
Publikováno v:
Georesursy, Vol 25, Iss 2, Pp 203-227 (2024)
Tonsteins, predominantly solid kaolinite clay interbeds, are widespread in the coals of the Kuznetsk Basin and usually contain idiomorphic zircon grains of magmatic origin in quantities suitable for uranium-lead (U-Pb) radiometric dating. For the fir
Externí odkaz:
https://doaj.org/article/adaff50026024ed7bfe3317018819150
Autor:
V. V. Silantiev, Ya. M. Gutak, M. Tichomirowa, A. Käßner, L. G. Porokhovnichenko, E. V. Karasev, A. S. Felker, M. N. Urazaeva, V. V. Zharinova
Publikováno v:
Учёные записки Казанского университета: Серия Естественные науки, Vol 165, Iss 4, Pp 664-687 (2024)
This article discusses the Late Kungurian radioisotopic age (276.9 ± 0.4 Ma) of the middle part of the Starokuznetsk Formation (Kuznetsk Subgroup, Kolchugino Group) of the Kuznetsk Basin determined by chemical abrasion–isotope dilution–thermal i
Externí odkaz:
https://doaj.org/article/23bbb42cd82544709e3d604fe4e0908a
Publikováno v:
Russian Physics Journal. 45:493-497
Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl3–H2 system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e7dc267be002635b9c3b36e1b5ffbe6
https://doi.org/10.1023/a:1021088522941
https://doi.org/10.1023/a:1021088522941
Publikováno v:
Russian Physics Journal. 35:939-942
A study has been made of electrophysical properties and deep traps in epitaxial n-GaAs grown by the chloride method and irradiated by electrons in the temperature range (20–500)°C. It is shown that the “natural” conductivity of GaAs is attaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841258dd3f5222fa6307bd04fd13e4b7
https://doi.org/10.1007/bf00559889
https://doi.org/10.1007/bf00559889
Publikováno v:
Soviet Physics Journal. 33:491-494
A thermodynamic calculation of the equilibrium composition of the gas phase Ga-As-Sn-Cl-H system was carried out. An estimate of the impurity composition of adsorbate layers was made. A study of the electrophysical and photoluminescent properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7e13c5f99e1d22e4a98bf1a8bc869e9
https://doi.org/10.1007/bf01325005
https://doi.org/10.1007/bf01325005
Publikováno v:
Growth of Crystals ISBN: 9781461351214
Lateral epitaxy of semiconducting materials has been developing for the last 15-20 years as a method of fabricating promising structures for micro-and optoelectronics [1, 2]. In particular, it has been used to fabricate permeable-base UHF transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ace2f1253df6c232200513c6bd70ea
https://doi.org/10.1007/978-1-4615-0537-2_3
https://doi.org/10.1007/978-1-4615-0537-2_3
Publikováno v:
Soviet Physics Journal. 35:51-52
A direct experimental proof was obtained (in the specific case of GaAs) of the dominant role of the substrate surface in the formation of defects representing step retardation sites during vapor phase epitaxy of III–V compounds.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::924aa92a9827264a175ca4354a5b4f65
https://doi.org/10.1007/bf01324985
https://doi.org/10.1007/bf01324985
Publikováno v:
Soviet Physics Journal. 21:1330-1333
A study has been made of the impurity composition of undoped epitaxial layers of gallium arsenide. It is shown that the impurity concentration in the layers considerably exceeds the electron and ion concentration. An analysis is made of the possible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::202026f82acf8623a56586c2aa04eed0
https://doi.org/10.1007/bf00894257
https://doi.org/10.1007/bf00894257
Autor:
M. V. Turshatova, M. D. Vilisova, I. A. Bobrovnikova, O. M. Ivleva, V. A. Moskovkin, L. P. Porokhovnichenko
Publikováno v:
Soviet Physics Journal. 32:44-48
The influence of annealing at a temperature of 750–830°C on the electrophysical, luminescent, and structural characteristics of GaAs layers doped with various concentrations of tin is studied. It is shown that, for low doping levels, the layers po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c3ee419e10ccc3162dab4bc84a9211
https://doi.org/10.1007/bf00896733
https://doi.org/10.1007/bf00896733
Publikováno v:
Soviet Physics Journal. 19:726-730
The dependence of growth rate, morphology, and structure of epitaxial layers of gallium arsenide on initial supersaturation conditions were investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca444cf742da63220e7d21f2c7c56175
https://doi.org/10.1007/bf00943469
https://doi.org/10.1007/bf00943469