Zobrazeno 1 - 2
of 2
pro vyhledávání: '"L. P. Kholodny"'
Autor:
S. P. Kobeleva, I. M. Anfimov, I. V. Schemerov, L. P. Kholodny, I. V. Borzikh, V. V. Ptashinsty
Publikováno v:
Standartnye Obrazcy, Vol 0, Iss 1, Pp 16-22 (2017)
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photocond
Externí odkaz:
https://doaj.org/article/816d2f1ccd5d48e39a4777c002e11970
Autor:
S. P. Kobeleva, I. M. Anfimov, I. V. Schemerov, L. P. Kholodny, I. V. Borzikh, V. V. Ptashinsty
Publikováno v:
Standartnye Obrazcy, Vol 0, Iss 1, Pp 16-22 (2015)
Standartnye Obrazcy, Vol 0, Iss 1, Pp 16-22 (2017)
Standartnye Obrazcy, Vol 0, Iss 1, Pp 16-22 (2017)
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photocond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7ffde30f35bf370efe42206e2e8f5f29
http://www.rmjournal.ru/jour/article/view/45
http://www.rmjournal.ru/jour/article/view/45