Zobrazeno 1 - 10
of 29
pro vyhledávání: '"L. O. Mereni"'
Autor:
Gediminas Juska, Valeria Dimastrodonato, Agnieszka Gocalinska, L. O. Mereni, Emanuele Pelucchi
Publikováno v:
Web of Science
We show that with a new family of pyramidal site-controlled InGaAsN quantum dots it is possible to obtain areas containing as much as 15% of polarization-entangled photon emitters - a major improvement if compared to the small fraction achievable by
Autor:
L. A. Larsson, D. Dufåker, V. Dimastrodonato, Per-Olof Holtz, Evgenii Moskalenko, Urban Forsberg, Karl Fredrik Karlsson, Erik Janzén, Chih-Wei Hsu, L. O. Mereni, Emanuele Pelucchi, Anders Lundskog
Publikováno v:
Physica B: Condensed Matter. 407:1472-1475
Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (μPL) will be reviewed. Both QDs formed in the Stranski–Krastanov mode as well as dots in the apex of pyramidal structures will be presented. For InGaAs/GaAs
Autor:
Valeria Dimastrodonato, Emanuele Pelucchi, L. O. Mereni, Gediminas Juska, Agnieszka Gocalinska
Publikováno v:
Current Opinion in Solid State and Materials Science. 16:45-51
Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility. We discuss recent results, also in view of the Stranski–Krastanow competition
Autor:
V. Dimastrodonato, L. O. Mereni, S.B. Healy, Robert J. Young, Emanuele Pelucchi, Eoin P. O'Reilly
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:2761-2764
Recent work has shown that site-controlled dots (QD) grown on (1 1 1)B GaAs substrates, pre-patterned with tetrahedral pyramidal recesses (Baier et al., 2006) [1], (Pelucchi et al., 2007) [2], (Zhu et al., 2007) [3] are suitable for the generation of
Publikováno v:
physica status solidi (b). 247:1862-1866
This work presents some fundamental features of pyramidal site-controlled In GaAs Quantum Dots (QDs) grown by metal-organic vapour phase epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer v
Publikováno v:
Superlattices and Microstructures. 47:78-82
We report on the optical properties of site-controlled InGaAs dots in GaAs barriers grown in pre-patterned, large pitch, pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of q
Autor:
B. Van Hattem, Valeria Dimastrodonato, Agnieszka Gocalinska, M. Ediger, Pierre Corfdir, L. O. Mereni, Gediminas Juska, Emanuele Pelucchi, T. H. Chung
Publikováno v:
Physical Review B. 89
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)$B$ oriented GaAs substrates patterned with inverted 7.5-\ensuremath{\mu}m pitch pyramidal recesses is presented. First, the composition of th
Autor:
V. Dimastrodonato, L. O. Mereni, Per-Olof Holtz, Emanuele Pelucchi, Gediminas Juska, D. Dufåker, Karl Fredrik Karlsson
Publikováno v:
Physical Review B. 87
In this experimental study of single InGaAs/GaAs quantum dots (QDs) the photoluminescence intensity of the second order LO-phonon replica of the excitonic interband recombination was measured along with the intensities of the first and zeroth orders.
Autor:
L. O. Mereni, Per-Olof Holtz, D. Dufåker, Gediminas Juska, V. Dimastrodonato, Karl Fredrik Karlsson, Emanuele Pelucchi
In this thesis two very similar processes have been studied, both involving excitations of particles during recombination of exciton complexes in quantum dots, reducing the energy of the emitted photon. Different exciton complexes are defined accordi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0a8806c70512a168a51cf36f00f92fb
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-92307
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-92307
Publikováno v:
AIP Conference Proceedings.
We present a site-controlled, highly symmetric quantum dot system with a density of at least 15 % of polarization-entangled photon emitters. Fidelity values of the entangled state as high as 0.721±0.043 were found.