Zobrazeno 1 - 10
of 72
pro vyhledávání: '"L. O. Bubulac"'
Autor:
Scott M. Johnson, R. N. Jacobs, Jeffrey M. Peterson, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. W. Bangs, Andrew J. Stoltz, L. A. Almeida, M. Reddy, J. D. Benson, A. Wang
Publikováno v:
Journal of Electronic Materials. 48:6194-6202
The formation of impurity ‘hot spot’ macro-defects—localized high impurity level contaminates—is examined. The evolution of macro-defects through their critical stages: as-received CdZnTe substrate, molecular beam epitaxy (MBE) prep etch, Te/
Autor:
Andrew J. Stoltz, A. Yulius, L. A. Almeida, L. O. Bubulac, Jeffrey M. Peterson, Scott M. Johnson, M. Carmody, M. Jaime-Vasquez, P. J. Smith, A. Wang, J. D. Benson, M. Reddy, R. N. Jacobs, D. D. Lofgreen, J. M. Arias, J. W. Bangs, Priyalal Wijewarnasuriya
Publikováno v:
Journal of Electronic Materials. 47:5671-5679
In this work, impurity ‘hot spot’ macro-defects—high impurity level macro-defect contaminates were examined. ‘Hot spots’ have very high localized concentrations of: K, Mg, Ni, Cr, Mn, Ca, Al, Na, Fe, and Cu. For example, these ‘hot spot
Autor:
D. D. Lofgreen, Priyalal Wijewarnasuriya, Scott M. Johnson, J. K. Markunas, R. N. Jacobs, Kelly A. Jones, J. Arias, Jeffrey M. Peterson, L. A. Almeida, M. Reddy, P. J. Smith, L. O. Bubulac, Andrew J. Stoltz, M. Jaime-Vasquez, J. D. Benson
Publikováno v:
Journal of Electronic Materials. 46:5418-5423
The highest sensitivity, lowest dark current infrared focal plane arrays (IRFPAs) are produced using HgCdTe on CdZnTe substrates. As-received state-of-the-art CdZnTe 6 × 6 and 7 × 7.5 cm substrates were analyzed using Nomarski phase contrast micros
Autor:
R. N. Jacobs, Priyalal Wijewarnasuriya, C. M. Lennon, J. K. Markunas, Andrew J. Stoltz, L. O. Bubulac, J. M. Arias, Jeffrey M. Peterson, Kelly A. Jones, D. D. Lofgreen, M. Reddy, M. Jaime-Vasquez, J. D. Benson, P. J. Smith, L. A. Almeida, Scott M. Johnson
Publikováno v:
Journal of Electronic Materials. 45:4502-4510
State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surfac
Autor:
A. Yulius, C. M. Lennon, L. A. Almeida, Priyalal Wijewarnasuriya, R. N. Jacobs, Jeffrey M. Peterson, M. Jaime-Vasquez, R. Hirsch, Andrew J. Stoltz, S. Motakef, M. Reddy, J. D. Benson, M. F. Vilela, P. J. Smith, M. Carmody, J. K. Markunas, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. Fiala, Scott M. Johnson
Publikováno v:
Journal of Electronic Materials. 44:3082-3091
State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al = 7.5 × 1014, Si = 3.7 × 1013, Cl = 3.12
Autor:
Priyalal Wijewarnasuriya, Jeffrey M. Peterson, D. D. Lofgreen, L. A. Almeida, Daeyeon Lee, G. Bostrup, R. N. Jacobs, Y. Chen, Andrew J. Stoltz, Scott M. Johnson, L. O. Bubulac, M. Jaime-Vasquez, M. Carmody, M. Reddy, J. D. Benson, A. Yulius, G. Brill, M. F. Vilela, J. K. Markunas, S. Couture, P. J. Smith
Publikováno v:
Journal of Electronic Materials. 43:3993-3998
State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a
Autor:
M. F. Vilela, David R. Rhiger, Jeffrey M. Peterson, L. O. Bubulac, Y. Chen, J. A. Arias, M. Jaime-Vasquez, P. J. Smith, C. M. Lennon, J. W. Bangs, R. N. Jacobs, J. D. Benson, E. A. Patten, Scott M. Johnson, J. K. Markunas, G. Brill, Priyalal Wijewarnasuriya, L. A. Almeida, D. D. Lofgreen, Andrew J. Stoltz
Publikováno v:
Journal of Electronic Materials. 42:3217-3223
The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning tran
Publikováno v:
Journal of Electronic Materials. 40:1733-1737
Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures. Thin ZnTe buffer layers and subsequent thick CdTe layers were grow
Autor:
M. Jaime-Vasquez, J. D. Benson, R. N. Jacobs, Jeffrey M. Peterson, U. Lee, Andrew J. Stoltz, L. A. Almeida, S. Farrell, Y. Chen, L. O. Bubulac, Scott M. Johnson, M. F. Vilela, D. D. Lofgreen, P. J. Smith, E. A. Patten, P. M. Goetz, Priyalal Wijewarnasuriya, G. Brill, J. K. Markunas, David R. Rhiger
Publikováno v:
Journal of Electronic Materials. 40:1847-1853
High-quality (112)B HgCdTe/Si epitaxial films with a dislocation density of ∼9 × 105 cm−2 as determined by etch pit density (EPD) measurements have been obtained by thermal cyclic annealing (TCA). The reduction of the dislocation density by TCA
Autor:
R. Hellmer, T. D. Golding, Jeffrey M. Peterson, M. Jaime-Vasquez, David R. Rhiger, M. Carmody, J. D. Benson, John H. Dinan, Priyalal Wijewarnasuriya, M. F. Vilela, D.F. Lofgreen, L. A. Almeida, Andrew J. Stoltz, L. O. Bubulac, Scott M. Johnson, M.F. Lee, R. N. Jacobs, A. Wang, Li Wang
Publikováno v:
Journal of Electronic Materials. 40:280-288
A model is proposed to explain disparities found in the operability values and histograms for long-wavelength infrared HgCdTe focal-plane arrays fabricated on Si substrates compared with those fabricated on CdZnTe. The starting point for the model is