Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. N. Vostretsova"'
Autor:
L. N. Vostretsova, A. A. Adamovich
Publikováno v:
Известия высших учебных заведений. Поволжский регион: Физико-математические науки, Iss 4 (2020)
Background. Despite the fact that InGaN / GaN-based structures have firmly conquered the LED market, some issues remain unresolved about how the electrical and optical characteristics of LEDs based on them change under the influence of external fa
Externí odkaz:
https://doaj.org/article/b10d01db57a44d2b8e3e89e632e1131b
Autor:
A. A. Adamovich, L. N. Vostretsova
Publikováno v:
Известия высших учебных заведений. Поволжский регион: Физико-математические науки, Iss 4 (2020)
Background. Despite the fact that InGaN / GaN-based structures have firmly conquered the LED market, some issues remain unresolved about how the electrical and optical characteristics of LEDs based on them change under the influence of external facto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b678c1bce7ba58e480b2ebea391d244
https://doaj.org/article/b10d01db57a44d2b8e3e89e632e1131b
https://doaj.org/article/b10d01db57a44d2b8e3e89e632e1131b
Publikováno v:
University proceedings. Volga region. Physical and mathematical sciences.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5e088138d6730be10eaf2b67999106
https://doi.org/10.21685/2072-3040-2019-2-7
https://doi.org/10.21685/2072-3040-2019-2-7
Publikováno v:
Semiconductors. 50:106-111
It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS2 and, consequently, the efficiency of light conversion, are of the tunneling–recombination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cbcab2c2ae8ae2ffe42e5ea6ec75a2c
https://doi.org/10.1134/s1063782616010061
https://doi.org/10.1134/s1063782616010061
Publikováno v:
Semiconductors. 43:1356-1362
Electroluminescence spectra of a light-emitting diode’s structure based on InGaN alloy with an In content of 11% were studied at a fixed current in the temperature range of 93–323 K. It was found that the electroluminescence spectra contain two p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97516f6d0e362bc33dcb641b9a1d2c7e
https://doi.org/10.1134/s1063782609100182
https://doi.org/10.1134/s1063782609100182
Publikováno v:
Semiconductors. 43:440-446
A model of generalized generation-recombination theory is proposed for semiconductors with nanoscale disorder. Application of the developed recombination model made it possible to determine the parameters characterizing localization of electronic sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e5efccee80cc98f20baefb5d5d9a6bf
https://doi.org/10.1134/s1063782609040071
https://doi.org/10.1134/s1063782609040071