Zobrazeno 1 - 10
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pro vyhledávání: '"L. N. S. Prakash Goteti"'
Autor:
L. N. S. Prakash Goteti
Publikováno v:
2022 IEEE 7th International Conference on Recent Advances and Innovations in Engineering (ICRAIE).
Autor:
G. V. Madhuri, L. N. S. Prakash Goteti
Publikováno v:
2018 IEEE 6th International Conference on MOOCs, Innovation and Technology in Education (MITE).
Agile manifesto and methodologies are prominent across the industries. The benefits of agile adoption include improvement in team morale, faster time to market, better feedback cycle and value delivery to the customers. On the other hand, IT and ITeS
Publikováno v:
2016 IEEE 4th International Conference on MOOCs, Innovation and Technology in Education (MITE).
A holistic approach is needed to impart abstract thinking and Programming skills among the students to enable them to be successful developers when they get employed in an IT organization where the organizations are transforming towards digital techn
Autor:
Anand P. Pathak, S. V. S. Nageswara Rao, Dimitris Emfietzoglou, N. Sathish, L. N. S. Prakash Goteti, V. Raghav Rao, S. Dhamodaran
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 230:100-105
A quantum mechanical treatment for dechanneling of fast moving electrons by stacking faults is given. One dimensional hydrogen atom model is used for planar potential due to an atomic plane and corresponding bound states in the transverse potential a
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 202:312-316
The transverse motion of relativistic electrons (e − ) and positrons (e + ) during their motion along the crystallographic channels is quantized and the spontaneous transitions among these energy levels lead to what is known as channeling radiation
Publikováno v:
Physical Review B. 59:8516-8519
The motion of positrons in the planar channel surrounded by two atomic planes gives rise to descrete energy levels in the transverse potential. The transitions from these bound states to scattering states due to lattice distortions in the planar chan
Publikováno v:
Journal of Physics: Condensed Matter. 9:1709-1718
A quantum mechanical treatment of the effects of stacking faults on dechannelling is given. A simple harmonic model for the planar potential due to two planes surrounding the channel, and the corresponding bound states in the potential are considered
Publikováno v:
Modern Physics Letters B. 10:745-751
The possibility of pions and muons being used as probe particles for defects studies in materials research has been investigated for the past thirty years or so. We discuss here the similarities of π+ and µ+ with positrons and tritons so that they
Publikováno v:
Current Developments in Atomic, Molecular, and Chemical Physics with Applications ISBN: 9781461349303
When energetic charged particles are injected along a high symmetry crystal direction, then because of the ordered structure of the target atoms, such a particle will undergo a correlated series of small angle gentle collisions, leading to a phenomen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::968240ad7e7068541f61aa4fff084202
https://doi.org/10.1007/978-1-4615-0115-2_35
https://doi.org/10.1007/978-1-4615-0115-2_35
Publikováno v:
AIP Conference Proceedings.
A quantum mechanical description of dechanneling by point defects will be presented. The effects of electrons of heavy impurities and those of host material are treated in a double screening formulation. For extended defects like stacking faults and