Zobrazeno 1 - 5
of 5
pro vyhledávání: '"L. N. Rusina"'
Publikováno v:
Semiconductors. 41:886-896
The temperature dependence of the energies of some characteristic energy extrema at the Γ, L, K, M, A, and H high-symmetry points of the Brillouin zone and the energies of the main interband transitions in hexagonal modifications of ZnS, ZnSe, ZnTe,
Publikováno v:
Semiconductors. 41:641-650
The method of empirical pseudopotential was used for the first time for the calculation of the temperature dependence of the energy extrema at the Г L, K, M, A, and H high-symmetry points of the Brillouin zone for hexagonal modifications of gallium
Publikováno v:
Semiconductors. 37:239-248
The temperature dependences of significant energy extrema at the high-symmetry points Γ, X, L, K, M, A, and H of the Brillouin zone in the cubic and hexagonal modifications of SiC, as well as the energies of the main interband transitions at these p
Publikováno v:
Semiconductors. 34:272-276
The consistent application of the perturbation theory to the solution of the Schrodinger equation describing the shallow-donor state in multivalley semiconductors has allowed us to obtain a secular equation of an order equal to the number of valleys.
Publikováno v:
Powder Metallurgy and Metal Ceramics. 33:291-299