Zobrazeno 1 - 3
of 3
pro vyhledávání: '"L. Mosidze"'
Autor:
R. Janelidze, D. Jishiashvili, Z. Shiolashvili, I. Nakhutsrishvili, E. Kutelia, V. Gobronidze, L. Mosidze, M. Katsiashvili
Publikováno v:
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.
Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N) films makes it possible to increase the radiation hardness of metal-insulator-semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94d3f0a63c1ff9f07dbc87e87cdfe62
https://doi.org/10.1109/smicnd.1996.557417
https://doi.org/10.1109/smicnd.1996.557417
Publikováno v:
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion parameters of Zn in GaAs are evaluated in the temperature range of 470-700/spl deg/C. The develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee09e26685f48e9497dba1b9536adfb
https://doi.org/10.1109/smicnd.1997.651598
https://doi.org/10.1109/smicnd.1997.651598
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.