Zobrazeno 1 - 10 of 28 pro vyhledávání: '"L. Monteagudo-Lerma"'
1
III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm
Autor: Pedro Corredera, Pablo Aitor Postigo, Miguel Gonzalez-Herraez, Fernando B. Naranjo, S. Valdueza-Felip, L. Monteagudo-Lerma, Eva Monroy, Marco Jiménez-Rodríguez
Publikováno v: physica status solidi (a). 213:1269-1275
We present an overview of the recently developed III-nitride-based optical waveguides for application in ultrafast signal processing at telecom wavelengths. We focus on different active and passive optical devices for further implementation within al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8d4031d4ad13809b9765af8a0110c82
https://doi.org/10.1002/pssa.201532810
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2
InN-Based Optical Waveguides Developed by RF Sputtering for All-Optical Applications at 1.55 $\mu \text{m}$
Autor: Pablo Aitor Postigo, L. Monteagudo-Lerma, Pedro Corredera, Miguel Gonzalez-Herraez, Fernando B. Naranjo, E. Barrios, Marco Jiménez-Rodríguez
Publikováno v: IEEE Photonics Technology Letters. 27:1857-1860
We report on the design, fabrication, and optical characterization of InN-based optical waveguides aiming at their application as all-optical limiters at 1.55 $\mu \text{m}$ . The InN guiding layers are grown by radio frequency (RF) sputtering on sap
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f1a72aed6f43e685cacebc7b29a0bdc
https://doi.org/10.1109/lpt.2015.2443873
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3
In-rich Al x In 1− x N grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers
Autor: Elaine Taylor-Shaw, L. Monteagudo-Lerma, Eva Monroy, Fernando B. Naranjo, S. Valdueza-Felip, Robert W. Martin, Miguel Gonzalez-Herraez, A. Núñez-Cascajero
Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (6), pp.065101. ⟨10.1088/1361-6463/aa53d5⟩
e_Buah Biblioteca Digital Universidad de Alcalá
instname
Journal of Physics D: Applied Physics, 2017, 50 (6), pp.065101. ⟨10.1088/1361-6463/aa53d5⟩
The structural, morphological, electrical and optical properties of In-rich AlxIn1-xN (0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire are investigated as a function of the deposition parameters. The RF power applie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39045deb2dc4455c1b99ad9ce48ee6bf
https://hal.archives-ouvertes.fr/hal-02166063
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4
Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber
Autor: L. Monteagudo-Lerma, Eva Monroy, Miguel Gonzalez-Herraez, Marco Jiménez-Rodríguez, Fernando B. Naranjo
Publikováno v: Optics Express
Optics Express, 2017, 25 (5), pp.5366. ⟨10.1364/OE.25.005366⟩
Optics Express, Optical Society of America-OSA Publishing, 2017, 25 (5), pp.5366. ⟨10.1364/OE.25.005366⟩
e_Buah Biblioteca Digital Universidad de Alcalá
instname
The growing demand of ultrafast mode-locked fiber lasers in the near infrared has boosted the research activity in this area. One of the most convenient ways to achieve passive mode locking consists of inserting a semiconductor saturable absorber in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a3a14c64b9ac942a19db43141e29668
https://hal.science/hal-02163024
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6
Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering
Autor: L. Monteagudo-Lerma, Miguel Gonzalez-Herraez, Eva Monroy, Cristina Navío, Fernando B. Naranjo, S. Valdueza-Felip, A. Núñez-Cascajero
Publikováno v: e_Buah Biblioteca Digital Universidad de Alcalá
instname
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
In this work, we investigate the effects of deposition conditions on the structural and morphological properties of AlInN thin films deposited on p-doped Si(111) substrates by reactive radio-frequency sputtering. The aluminum composition can be tuned
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a72c8d99a88068680f5e0cf2162fb98
http://hdl.handle.net/20.500.12614/462
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7
Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer
Autor: A. Núñez-Cascajero, Miguel Gonzalez-Herraez, L. Monteagudo-Lerma, Eva Monroy, A. Ruiz, S. Valdueza-Felip, Fernando B. Naranjo
Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, 2016, 434, pp.13-18. ⟨10.1016/j.jcrysgro.2015.10.016⟩
e_Buah Biblioteca Digital Universidad de Alcalá
instname
Journal of Crystal Growth, Elsevier, 2016, 434, pp.13-18. ⟨10.1016/j.jcrysgro.2015.10.016⟩
Digital.CSIC. Repositorio Institucional del CSIC
We present the structural and optical properties of (0001)-oriented nanocolumnar films of InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed that the column density and dimensions are highly dependent on the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d5b94d67ec958de3ac49cb9081e413c
https://hal.science/hal-02166018
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8
Nonlinear Absorption at Optical Telecommunication Wavelengths of InN Films Deposited by RF Sputtering
Autor: Miguel Gonzalez-Herraez, S. Valdueza-Felip, J. Mangeney, L. Monteagudo-Lerma, François H. Julien, Fernando B. Naranjo
Publikováno v: IEEE Photonics Technology Letters. 24:1998-2000
We report on the nonlinear optical absorption of InN films deposited on GaN templates by radio-frequency (RF) sputtering. The layers are characterized through the pump-probe technique at 1.55 μm, by obtaining a nonlinear absorption coefficient of 16
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a388bf3c299afbc726b247561adeb4f
https://doi.org/10.1109/lpt.2012.2217484
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9
Two-step method for the deposition of AlN by radio frequency sputtering
Autor: L. Monteagudo-Lerma, Eva Monroy, Miguel Gonzalez-Herraez, S. Valdueza-Felip, Fernando B. Naranjo, A. Núñez-Cascajero
Publikováno v: e_Buah Biblioteca Digital Universidad de Alcalá
instname
This paper presents a detailed study of the influence of deposition conditions on structural and morphological properties of AlN thin films synthesized on c-sapphire substrates by radio frequency (RF) reactive sputtering. After the optimization of de
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4860ff9141016b3a1fbc70ac4db46d4
http://hdl.handle.net/10017/25021
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10
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
Autor: L. Monteagudo-Lerma, Eva Monroy, Pedro Corredera, Miguel Gonzalez-Herraez, S. Valdueza-Felip, G. Strasser, Fernando B. Naranjo, Eirini Sarigiannidou, Laetitia Rapenne
Publikováno v: e_Buah Biblioteca Digital Universidad de Alcalá
instname
Optics Express
Optics Express, 2013, 21 (23), pp.27578-27586. ⟨10.1364/oe.21.027578⟩
Optics Express, Optical Society of America-OSA Publishing, 2013, 21 (23), pp.27578-27586. ⟨10.1364/oe.21.027578⟩
Digital.CSIC. Repositorio Institucional del CSIC
We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 μm. The transmittance of the TMpolarized light increases with the inciden
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efa2553db88303dee0f2fe0f9b5eb672
http://hdl.handle.net/10261/89622
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