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Impact of thickness on the structural properties of high tin content GeSn layers

Autor: J. Aubin, Vincent Calvo, Vincent Reboud, L. Milord, Alban Gassenq, Nicolas Pauc, J.M. Hartmann

Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2017, 473, pp.20-27. ⟨10.1016/j.jcrysgro.2017.05.006⟩
Journal of Crystal Growth, 2017, 473, pp.20-27. ⟨10.1016/j.jcrysgro.2017.05.006⟩

We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure – Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00bd8c09b0ed0d7f7927aec7ba0b1e15
https://doi.org/10.1016/j.jcrysgro.2017.05.006

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Electromagnetic analysis for optical coherence tomography based through silicon vias metrology

Autor: E. Herth, G. Vienne, P. Coste, Pierre Chavel, Alain Bosseboeuf, W. A. Iff, Dario Alliata, L. Milord, Christophe Sauvan, Mondher Besbes, Jean-Paul Hugonin

Publikováno v: Applied optics
Applied optics, Optical Society of America, 2019, 58 (27), pp.7472-7488. ⟨10.1364/AO.58.007472⟩

International audience; This paper reports on progress in the analysis of time-domain optical coherence tomography (OCT) applied to the dimensional metrology of through-silicon vias (TSVs), which are vertical interconnect accesses in silicon, enablin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4fcd5313b2ea6a321e43b70abefddfa
https://pubmed.ncbi.nlm.nih.gov/31674397

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Progress in OCT-based Through Silicon Via (TSV) metrology

Autor: J-P. Hugonin, Pierre Chavel, Dario Alliata, Christophe Sauvan, Mondher Besbes, E. Herth, G. Vienne, P. Coste, Alain Bosseboeuf, W. A. Iff, L. Milord

Publikováno v: Frontiers in Optics 2019
Frontiers in Optics
Frontiers in Optics, 2019, Washington, United States. pp.JW4A.115, ⟨10.1364/FIO.2019.JW4A.115⟩

International audience; We report on progress in Time-Domain OCT (optical coherence tomography) applied to TSV (vertical interconnect accesses in silicon, enabling stacking of devices). Transitioning from the common scalar approach to an electromagne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dcff20d2b96d822c476f8cd586b9ac8
https://hal.archives-ouvertes.fr/hal-02343398/document

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GeSn lasers for mid-infrared silicon photonics (Conference Presentation)

Autor: Jean-Michel Hartmann, L. Milord, Nicolas Pauc, Jauris Aubin, Vincent Reboud, Hans Sigg, Mathieu Bertrand, Alexei Chelnokov, Quang Minh Thai, Vincent Calvo, Alban Gassenq, T. Zabel, Kevin Guilloy

Publikováno v: Silicon Photonics XIII.

At least four groups have demonstrated GeSn direct bandgap material and shown cryogenic temperature lasers under optical pumping. With up to 16% of Sn, our lasers operate up to 180K and lase up to wavelengths of 3.1 um. We will describe our efforts t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a0d7050697ad9076f807a1b7fe03ac5
https://doi.org/10.1117/12.2290687

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Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K

Autor: Mathieu Bertrand, H. Sigg, Q. M. Thai, J. Aubin, V. Reboud, T. Zabel, D. Rouchon, A. Chelnokov, J. Rothman, Alban Gassenq, L. Milord, F. Armand Pilon, J.M. Hartmann, Kevin Guilloy, V. Calvo, Nicolas Pauc

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 111 (9), pp.092101. ⟨10.1063/1.5000353⟩
Applied Physics Letters, 2017, 111 (9), pp.092101. ⟨10.1063/1.5000353⟩

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c879233fca76d4029e1c5e5252f1eb06
https://hal.archives-ouvertes.fr/hal-02060100

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Lasing of optically pumped GeSn micro-structures grown on step-graded GeSn buffers

Autor: Hans Sigg, Vincent Calvo, Alexei Chelnokov, J. M. Hartmann, J. Aubin, T. Zabel, Eugénie Martinez, Alban Gassenq, Mathieu Bertrand, Christophe Licitra, L. Milord, Q. M. Thai, Denis Rouchon, Nicolas Pauc, J. Rothman, Vincent Reboud, F. Armand Pilon

Publikováno v: 2017 IEEE 14th International Conference on Group IV Photonics (GFP).

We report optically pumped lasing from GeSn micro-disks with high Sn content active GeSn layers. Buffer layers made by a step-growth show enhanced performances compared to conventional Ge strain relaxed buffers.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::282c627d0717507a7d82318d3acd02a4
https://doi.org/10.1109/group4.2017.8082172

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Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?

Autor: Q. M. Thai, Vincent Reboud, Hans Sigg, Alban Gassenq, J. Rothman, Kevin Guilloy, J. Aubin, T. Zabel, J. M. Hartmann, Mathieu Bertrand, Nicolas Pauc, Alexei Chelnokov, Vincent Calvo, L. Milord

Publikováno v: 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM).

For the near-infrared (near-IR) optical data communications, silicon photonics became a mature technology. Building on the technological developments associated with datacoms, silicon photonics now expands into the mid-infrared (mid-IR), mostly for t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::53ef042b80dc33fec523d961d77fa74b
https://doi.org/10.1109/phosst.2017.8012634

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Inductively coupled plasma etching of germanium tin for the fabrication of photonic components

Autor: Samuel Tardif, J. Aubin, L. Milord, A. Chelnokov, V. Reboud, Kevin Guilloy, J. Rothman, Nicolas Pauc, V. Calvo, Alban Gassenq, J.M. Hartmann

Publikováno v: SPIE OPTO 2017
SPIE OPTO 2017, Jan 2017, San Francisco, United States. pp.101080C, ⟨10.1117/12.2252280⟩

The demonstration of a CMOS compatible laser working at room temperature has been eagerly sought since the beginning of silicon photonics. Although bulk Germanium (Ge) is an indirect bandgap material, Tin (Sn) can be incorporated into it to turn the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::103f3f21f68a6412ac1e1c53fa215098
https://hal.science/hal-02016468

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