Výsledky vyhledávání

Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress

Autor: C. Laguna, M. Bernard, J. Garrione, F. Fillot, F. Aussenac, D. Rouchon, G. Lima, L. Militaru, A. Souifi, G. Navarro

Publikováno v: Journal of Applied Physics. 133:074501

In this article, we present the structural investigation by Raman spectroscopy of GeSbSeN ovonic threshold switching (OTS) material once integrated in selector devices featuring a top electrode based on a transparent and conductive indium tin oxide l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38ad2cc880599bcab06372d1519d24da
https://doi.org/10.1063/5.0134947

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Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology

Autor: Thierry Baron, D. Deleruyelle, P.V. Guenery, Serge Blonkowski, Abdelkader Souifi, L. Militaru, J. Moeyaert, Khaled Ayadi, E. A. Leon Perez, Nicolas Baboux

Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩

In this work we report on the integration of indium oxide (In2O3) nanoparticles (NPs) for Resistive Random Access Memory (RRAM) applications. This low-temperature integration process is fully compatible CMOS Back-End integration given a carefull sele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::731be2b61c72b31c3e267217d1e297cc
https://hal.archives-ouvertes.fr/hal-03116248

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Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability

Autor: Mathieu Bernard, M.-C. Cyrille, Etienne Nowak, Denis Rouchon, Emmanuel Nolot, Guillaume Bourgeois, G. Navarro, C. Laguna, L. Militaru, Névine Rochat, J. Garrione, A. Souifi, N. Castellani, C. Sabbione

Publikováno v: IMW 2020-2020 IEEE International Memory Workshop
IMW 2020-2020 IEEE International Memory Workshop, May 2020, Dresde, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108130⟩
2020 IEEE International Memory Workshop (IMW)

International audience; In this paper, we investigate an innovative Ovonic Threshold Switching Selector (OTS) based on Multilayer structure (ML). Thanks to physico-chemical analysis and electrical characterization we show how MLs properties and struc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49730e4f31549ee950526afd81682f17
https://hal-cea.archives-ouvertes.fr/cea-02930899/file/CL-IMW2020-SUBMITTED.pdf

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Ferric carboxymaltose for iron deficiency at discharge after acute heart failure: a multicentre, double-blind, randomised, controlled trial

Autor: Ponikowski, P. Kirwan, B.-A. Anker, S.D. McDonagh, T. Dorobantu, M. Drozdz, J. Fabien, V. Filippatos, G. Göhring, U.M. Keren, A. Khintibidze, I. Kragten, H. Martinez, F.A. Metra, M. Milicic, D. Nicolau, J.C. Ohlsson, M. Parkhomenko, A. Pascual-Figal, D.A. Ruschitzka, F. Sim, D. Skouri, H. van der Meer, P. Lewis, B.S. Comin-Colet, J. von Haehling, S. Cohen-Solal, A. Danchin, N. Doehner, W. Dargie, H.J. Motro, M. Butler, J. Friede, T. Jensen, K.H. Pocock, S. Jankowska, E.A. Azize, G. Fernandez, A. Zapata, G.O. Garcia Pacho, P. Glenny, A. Ferre Pacora, F. Parody, M.L. Bono, J. Beltrano, C. Hershson, A. Vita, N. Luquez, H.A. Cestari, H.G. Fernandez, H. Prado, A. Berli, M. García Durán, R. Thierer, J. Diez, M. Lobo Marquez, L. Borelli, R.R. Hominal, M.Á. Ameri, P. Agostoni, P. Salvioni, A. Fattore, L. Gronda, E. Ghio, S. Turrini, F. Uguccioni, M. Di Biase, M. Piepoli, M. Savonitto, S. Mortara, A. Terrosu, P. Fucili, A. Boriani, G. Midi, P. Passamonti, E. Cosmi, F. van der Meer, P. Van Bergen, P. van de Wetering, M. Al-Windy, N.Y.Y. Tanis, W. Meijs, M. Groutars, R.G.E.J. The, H.K.S. Kietselaer, B. van Kesteren, H.A.M. Beelen, D.P.W. Heymeriks, J. Van de Wal, R. Schaap, J. Emans, M. Westendorp, P. Nierop, P.R. Nijmeijer, R. Manintveld, O.C. Dorobantu, M. Darabantiu, D.A. Zdrenghea, D. Toader, D.M. Petrescu, L. Militaru, C. Crisu, D. Tomescu, M.C. Stanciulescu, G. Rodica Dan, A. Iosipescu, L.C. Serban, D.L. Drozdz, J. Szachniewicz, J. Bronisz, M. Tycińska, A. Wozakowska-Kaplon, B. Mirek-Bryniarska, E. Gruchała, M. Nessler, J. Straburzyńska-Migaj, E. Mizia-Stec, K. Szelemej, R. Gil, R. Gąsior, M. Gotsman, I. Halabi, M. Shochat, M. Shechter, M. Witzling, V. Zukermann, R. Arbel, Y. Flugelman, M. Ben-Gal, T. Zvi, V. Kinany, W. Weinstein, J.M. Atar, S. Goland, S. Milicic, D. Horvat, D. Tušek, S. Udovicic, M. Šutalo, K. Samodol, A. Pesek, K. Artuković, M. Ružić, A. Šikić, J. McDonagh, T. Trevelyan, J. Wong, Y.-K. Gorog, D. Ray, R. Pettit, S. Sharma, S. Kabir, A. Hamdan, H. Tilling, L. Baracioli, L. Nigro Maia, L. Dutra, O. Reis, G. Pimentel Filho, P. Saraiva, J.F. Kormann, A. dos Santos, F.R. Bodanese, L. Almeida, D. Precoma, D. Rassi, S. Costa, F. Kabbani, S. Abdelbaki, K. Abdallah, C. Arnaout, M.S. Azar, R. Chaaban, S. Raed, O. Kiwan, G. Hassouna, B. Bardaji, A. Zamorano, J. del Prado, S. Gonzalez Juanatey, J.R. Ga Bosa Ojeda, F.I. Gomez Bueno, M. Molina, B.D. Sim, D. Yeo, T.J. Loh, S.Y. Soon, D. Ohlsson, M. Smith, J.G. Gerward, S. Khintibidze, I. Lominadze, Z. Chapidze, G. Emukhvari, N. Khabeishvili, G. Chumburidze, V. Paposhvili, K. Shaburishvili, T. Parhomenko, O. Kraiz, I. Koval, O. Zolotaikina, V. Malynovsky, Y. Vakaliuk, I. Rudenko, L. Tseluyko, V. Stanislavchuk, M. AFFIRM-AHF investigators

Background: Intravenous ferric carboxymaltose has been shown to improve symptoms and quality of life in patients with chronic heart failure and iron deficiency. We aimed to evaluate the effect of ferric carboxymaltose, compared with placebo, on outco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2127::4c395978b99d9565c1454ab70c7ba144
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3103375

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Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics

Autor: Slah Hlali, Neila Hizem, Abdelkader Souifi, Adel Kalboussi, L. Militaru

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 75, pp.154. ⟨10.1016/j.microrel.2017.06.056⟩

The impact of states at the Al 2 O 3 /Si interface on the capacitance-voltage C-V characteristics of a metal/insulator/semiconductor heterostructure (MIS) capacitor was studied by a numerical simulation, by solving Schrodinger-Poisson equations and t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6de5eea8beb52fe1a52f3ae8e3d406ad
https://doi.org/10.1016/j.microrel.2017.06.056

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Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL

Autor: Thierry Baron, E. A. Leon Perez, J. Moeyaert, Serge Blonkowski, Nicolas Baboux, L. Militaru, Khaled Ayadi, S. Labau, Abdelkader Souifi, D. Deleruyelle, Pierre-Vincent Guenery

Publikováno v: IEEE
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩

this work report on the integration of indium oxide (In2O3) nanocrystals (NCs) for Resistive Random Access Memory (RRAM) applications. The RRAM integration based on MOCVD and ALD depositions is fully compatible fabrication process with CMOS of back-e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10288e06c600adc86d13dca3c3d4f87c
https://hal.univ-grenoble-alpes.fr/hal-02330674

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Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

Autor: Nicolas Baboux, Pierre-Vincent Guenery, K. Hamga, Gérard Benassayag, Dominique Drouin, Caroline Bonafos, E. Cossec, Béatrice Pécassou, Robin Cours, Abdelkader Souifi, L. Militaru, Serge Ecoffey

Publikováno v: Materials Research Express
Materials Research Express, IOP Publishing Ltd, 2018, 5, pp.015027. 〈10.1088/2053-1591/aaa30b〉
Materials Research Express, IOP Publishing Ltd, 2018, 5, pp.015027. ⟨10.1088/2053-1591/aaa30b⟩
Materials Research Express, 2018, 5, pp.015027. ⟨10.1088/2053-1591/aaa30b⟩

International audience; We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b27ddf802a3c40ee488490dc69e33614
https://hal.archives-ouvertes.fr/hal-01701543

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Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

Autor: Daniel Thomas, Lucian Roiban, A Malchère, L. Militaru, Etienne Puyoo, M. Le Berre, David Albertini, Thierry Epicier, Siddardha Koneti, Francis Calmon, Andrei Sabac

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2017, 28 (45), 455602 (8 p.). ⟨10.1088/1361-6528/aa8b5e⟩
HAL

International audience; Pt nanoparticles in a Al2O3 dielectric matrix thin films are elaborated by means of atomic layer deposition. These nanostructured thin films are integrated in vertical and planar test structures in order to assess both their i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cdbace63b67f6f4697c33ba7f06b9a4
https://pubmed.ncbi.nlm.nih.gov/29039364

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Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line

Autor: Thierry Baron, Nicolas Baboux, Edgar A. A. Leon Perez, Abdelkader Souifi, L. Militaru, Khaled Ayadi, J. Moeyaert, Oumaima Abouzaid, Pierre-Vincent Guenery

Publikováno v: EUROSOI-ULIS, 2017
EUROSOI-ULIS, 2017, Jan 2017, Athens, Greece
EUROSOI-ULIS
EUROSOI-ULIS, 2017, pp.47-50

3-5 April 2017; International audience; We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles with a memory capacitor structure. Our approach is based on the use of indium oxide (In2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89d845a023f3e5c7d065b6dd1393c4a6
https://hal.archives-ouvertes.fr/hal-01701469

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High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure

Autor: Neila Hizem, Abdelkader Souifi, Slah Hlali, Abdelaali Farji, Adel Kalboussi, L. Militaru

Publikováno v: Journal of Alloys and Compounds
Journal of Alloys and Compounds, Elsevier, 2017, 713, pp.194

The electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure were studied in the temperature range of 380–450 K at 1 MHz. These properties were calculated from experimental C − V and G / ω − V measurements. Experimental results sho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::997e4894b07828e2deafbc1f8d2abadd
https://hal.archives-ouvertes.fr/hal-01701530

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