Zobrazeno 1 - 10
of 100
pro vyhledávání: '"L. Manchanda"'
Publikováno v:
Journal of the Indian Society of Remote Sensing. 32:81-90
Various attributes can be derived from Digital Elevation Model (DEM), which are essential to analyze watershed physical characteristics. This paper discusses utility and accuracy of satellite DEM surfaces and their derivatives. Facilities available i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c7aeb9e220b83a321d3be6921c23a0
https://doi.org/10.1007/bf03030850
https://doi.org/10.1007/bf03030850
Autor:
S. Aravamudhan, F. Klemens, M.D. Morris, B Busch, P. J. Silverman, Martin L. Green, R. B. van Dover, G.D. Wilk, T.W. Sorsch, L. Manchanda
Publikováno v:
Microelectronic Engineering. 59:351-359
The exponential growth of the silicon industry can be attributed to that fact that silicon has a native oxide that is silicon dioxide. With SiO 2 soon approaching its fundamental limit, we must find an alternate to SiO 2 or a new switch to replace MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c7bfb9404b70452bb80bc234033d1e
https://doi.org/10.1016/s0167-9317(01)00668-2
https://doi.org/10.1016/s0167-9317(01)00668-2
Autor:
Vincent M. Donnelly, A. Kornblit, M.D. Morris, K. Pelhos, R. B. van Dover, Martin L. Green, E. Bower, L. Manchanda, Y. Hu
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1361-1366
As new, advanced high-k dielectrics are being developed to replace SiO2 in future generations of microelectronics devices, understanding their etch characteristics becomes vital for integration into the manufacturing process. We report on the etch ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c85168aea36e6c8827b24710c43b02
https://doi.org/10.1116/1.1349721
https://doi.org/10.1116/1.1349721
Publikováno v:
Journal of the Indian Society of Remote Sensing. 28:179-185
An advanced and accurate information of sugar cane production is an important component for the management of sugar cane industry. Remote Sensing is most viable technique which can provide the above information well in advance. Stratified sampling te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3649aa4f5bab618afb5607c094ef419
https://doi.org/10.1007/bf02989902
https://doi.org/10.1007/bf02989902
Autor:
Rajinder Singh Thind, R. L. Manchanda
Publikováno v:
Indian Journal of Plastic Surgery, Vol 02, Iss 02, Pp 21-28 (1969)
Externí odkaz:
https://doaj.org/article/556836b50e474b0ea401dc477cc57da8
Autor:
Dr R. L. Manchanda, Dr Rajinder Singh
Publikováno v:
Indian Journal of Plastic Surgery, Vol 01, Iss 01, Pp 65-72 (1968)
1. Brief bistory, clinical features of basal cell carcinoma are described.
Externí odkaz:
https://doaj.org/article/8c7d422195aa4831bc50187ca5227740
Publikováno v:
IEEE Electron Device Letters. 17:521-524
As gate oxides become thinner, in conjunction with scaling of MOS technologies, a discrepancy arises between the gate oxide capacitance and the total gate capacitance, due to the increasing importance of the carrier distributions in the silicon and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd6592146ec6b1f2f45ff5dce7f7fe9
https://doi.org/10.1109/55.541768
https://doi.org/10.1109/55.541768
Publikováno v:
IEEE Transactions on Electron Devices. 43:982-990
We report on a quantitative study of boron penetration from p/sup +/ polysilicon through 5- to 8-nm gate dielectrics prepared by rapid thermal oxidation in O/sub 2/ or N/sub 2/O. Using MOS capacitor measurements, we show that boron penetration expone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da7e479e05851d6e2fd1526b862113c
https://doi.org/10.1109/16.502134
https://doi.org/10.1109/16.502134
Publikováno v:
Journal of the Indian Society of Remote Sensing. 24:11-23
The arid tract of Punjab experiences various problems like thick sand cover (sand dunes) in large area, poor retention of water and nutrients in coarse textured soils, soil salinity and/or alkalinity, water logging and poor ground water quality. In t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f33549157cdbb57a4dcc3fff405ff24
https://doi.org/10.1007/bf03023888
https://doi.org/10.1007/bf03023888
Autor:
D. Brasen, K. W. Evans‐Lutterodt, G. S. Higashi, J. L. Dawson, L. Manchanda, T. Boone, K. Krisch, Martin L. Green, Mau‐Tsu Tang
Publikováno v:
Journal of Applied Physics. 77:4746-4749
Using x‐ray diffraction techniques, we measure the root‐mean‐square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2f2c84e059b0e900d22b4c312062b33
https://doi.org/10.1063/1.359410
https://doi.org/10.1063/1.359410