Zobrazeno 1 - 10
of 111
pro vyhledávání: '"L. M. Sorokin"'
Publikováno v:
Technical Physics Letters. 47:893-896
Autor:
W. V. Lundin, Andrey E. Nikolaev, A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin, A. V. Sakharov
Publikováno v:
Technical Physics Letters. 46:991-995
Two buffer structures based on AlxGa1 – xN solutions with silicon doping and without it have been studied by transmission electron microscopy. The structures have been grown on silicon substrates with the (111) orientation by metalorganic vapor-pha
Autor:
L. M. Sorokin, Peter Panfilov, T. S. Argunova, Zh. V. Gudkina, M. Yu. Gutkin, A. V. Myasoedov, A. E. Kalmykov, D. V. Zaytsev, E. D. Nazarova
Publikováno v:
Technical Physics. 65:1391-1402
Dentin in the human tooth is a natural composite material with a complex multilevel hierarchical structure and consists of micro and nanostructures that are related to each other in a complex interrelation governed by laws that have not been fully un
Autor:
V. N. Jmerik, A. V. Myasoedov, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, Dmitrii V. Nechaev
Publikováno v:
Technical Physics Letters. 46:543-547
We present the results of a transmission electron microscopy and X-ray diffractometry investigation of AlN/c-Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy. It has been shown that AlN buffer layers with
Autor:
S. A. Kukushkin, A. V. Myasoedov, A. E. Kalmykov, L. M. Sorokin, M. Yu. Gutkin, V. N. Bessolov
Publikováno v:
Physics of the Solid State. 61:2316-2320
Transmission electron microscopy was used to study the interaction of a + c and a dislocations in a thick (14 μm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C-SiC/Si(001) template. It is shown that the propagation of a dislocatio
Publikováno v:
Physics of the Solid State. 61:1707-1715
The structural features of the formation of radiation defects in proton-implanted layers of silicon plates during their heat treatment have been studied. New data on the nature, the characteristics, and the microdefect concentration in Si crystals ir
Publikováno v:
Physics of the Solid State. 61:1383-1388
In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 × 1016
Publikováno v:
Technical Physics Letters. 44:926-929
The defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defec
Autor:
A. E. Kalmykov, L. M. Sorokin, A. Lashkul, R. V. Parfen’ev, N. Yu. Mikhailin, A. V. Fokin, D. V. Shamshur, Yu. A. Kumzerov, A. V. Chernyaev
Publikováno v:
Physics of the Solid State. 60:1935-1941
Bulk nanocomposites based on superconducting metals Pb and In embedded into matrices of natural chrysotile asbestos with the nanotube internal diameter d ~ 6 nm have been fabricated and studied. The low-temperature electrical and magnetic properties
Publikováno v:
Journal of Physics: Conference Series. 1697:012097
An array of CuO nanowhiskers have been fabricated by heating of copper coatings formed on stainless steel mesh substrate in air. Cross-sections of the nanowhiskers were studied by transmission electron microscopy. It was established that whiskers con