Zobrazeno 1 - 10
of 114
pro vyhledávání: '"L. M. R. Scolfaro"'
Autor:
Guilherme Matos Sipahi, L. M. R. Scolfaro, O. F. P. dos Santos, E. F. da Silva, Sara C. P. Rodrigues
Publikováno v:
Applied Surface Science. 254:7790-7793
We present theoretical photoluminescence (PL) spectra of undoped and p-doped AlxIn1−x−yGayN/AlXIn1−X−YGaYN double quantum wells (DQWs). The calculations were performed within the k.p method by means of solving a full eight-band Kane Hamiltoni
Publikováno v:
physica status solidi (c). 2:2468-2471
In this work, we have calculated ab initio the equation of state for the rocksalt, zincblende, wurtzite, 4H and 6H hexagonal modifications of GaN and InN, as well as both the wurtzite-to-rocksalt and zincblende-to-rocksalt phase transitions in these
Publikováno v:
physica status solidi (c). 2:2508-2511
In this work, ab initio total energy electronic structure calculations are combined with Monte Carlo simulations to study microscopically the indium separated phases taking place in AlxGayIn1–x–yN quaternary alloys. The presence of aluminum in th
Publikováno v:
Journal of Magnetism and Magnetic Materials. 288:384-396
In this work we report ab initio calculations of the electronic structures of the binary compounds MnN and MnAs, and of the diluted magnetic semiconductor alloys Ga 1 - x Mn x N ( x = 0.06 ; 0.03) in the zinc-blende phase. We use the theoretical loca
Autor:
Guilherme Matos Sipahi, L. M. R. Scolfaro, I. C. da Cunha Lima, J. R. Leite, S. C. P. Rodrigues
Publikováno v:
Journal of Superconductivity. 18:61-67
A self-consistent Luttinger–Kohn (LK) calculation is used to obtain the electronic structure of Mn-doped semiconductor multilayers. In the particular, case of a (In,Ga)As/GaAs heterostructure, the ternary alloy has a smaller gap than GaAs, and intr
Autor:
L. M. R. Scolfaro, A. T. Lino, Joelson Cott Garcia, G. A. Farias, Valder N. Freire, J. R. Leite, E. F. da Silva
Publikováno v:
physica status solidi (c). 1:S236-S240
Electronic band and structural properties of the cubic, tetragonal, and monoclinic phases of HfO2 are calculated. The all electron ab initio self-consistent linear augmented plane-wave method within the framework of the local-density approximation wa
Publikováno v:
Brazilian Journal of Physics v.34 n.2b 2004
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 34, Issue: 2b, Pages: 593-597, Published: JUN 2004
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 34, Issue: 2b, Pages: 593-597, Published: JUN 2004
The electronic, structural, and thermodynamic properties of cubic (zinc blende) group-III nitride ternary In xGa1-xN and quaternary Al xIn yGa1-x-yN alloys are investigated by combining first-principles total energy calculations and cluster expansion
Autor:
L. M. R. Scolfaro, J. R. Leite, F. García-Moliner, H. Rodríguez-Coppola, Joaquín Tutor-Sánchez
Publikováno v:
Microelectronics Journal. 35:103-110
The free carrier absorption coefficient of a low dimensional semiconductor system is formulated, with inclusion of interparticle Coulomb interaction, perturbatively, considering the bubble diagrams summed up to infinite order, which accounts for the
Publikováno v:
Microelectronics Journal. 35:53-57
The thermodynamics as well as the energetics and the structural properties of cubic group-III nitrides alloys have been investigated by combining first-principles total energy calculations and cluster expansion methods. In particular results are show
Autor:
V. Yu. Davydov, Friedhelm Bechstedt, Mohamed Ferhat, Rüdiger Goldhahn, Oliver Ambacher, Jürgen Furthmüller, L. M. R. Scolfaro, Lara K. Teles, J. R. Leite
Publikováno v:
physica status solidi (a). 195:628-633
We present ab initio calculations of the electronic structure and the optical properties of In x Ga 1-x N. They are completed by studies of the strain influence on the alloys. The results are critically discussed in the light of recent experiments. W