Zobrazeno 1 - 10
of 20
pro vyhledávání: '"L. M. Krasil'nikova"'
Publikováno v:
Russian Physics Journal. 45:493-497
Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl3–H2 system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e7dc267be002635b9c3b36e1b5ffbe6
https://doi.org/10.1023/a:1021088522941
https://doi.org/10.1023/a:1021088522941
Autor:
A. E. Shubin, P. B. Paschenko, L. M. Krasil'nikova, L. G. Lavrent'eva, I. V. Ivonin, G. A. Aleksandrova
Publikováno v:
Soviet Physics Journal. 27:379-383
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a00a567dfd506101af3d17667a55c3f
https://doi.org/10.1007/bf00898605
https://doi.org/10.1007/bf00898605
Autor:
A. E. Shubin, M. P. Yakubenya, I. V. Ivonin, L. F. Lavrent'eva, G. A. Aleksandrova, L. M. Krasil'nikova
Publikováno v:
Soviet Physics Journal. 23:813-817
Kinetic (growth rate), optical, and electron-microscopic (surface relief) studies were made of the process of formation of homoepitaxial films of InAs in a chloride gas-transport system. It was found that the (111)A and B surfaces of indium arsenide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef547f2ca26a53aab92d3f2f054066b1
https://doi.org/10.1007/bf00892532
https://doi.org/10.1007/bf00892532
Publikováno v:
Soviet Physics Journal. 17:12-16
The data cited shows that the state of the substrate surface in the case of gallium arsenide epitaxy has a considerable and long-lasting effect on the growth kinetics. This effect is due first and foremost to those contaminants which remain on the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d16f0cc7dc30325339ab4dc49a8ded0
https://doi.org/10.1007/bf00889906
https://doi.org/10.1007/bf00889906
Publikováno v:
Soviet Physics Journal. 18:1270-1275
The initial steps of growth of auto-epitaxial films of GaAs are studied under an electron microscope. The substantial influence of orientation on the activation kinetics of the growth relief on the initial stage, concentration of growth defects, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d721534d074fe20c180a31037c9fe5a
https://doi.org/10.1007/bf00892720
https://doi.org/10.1007/bf00892720
Publikováno v:
Soviet Physics Journal. 28:542-546
The electrophysical properties, the lattice constant, and the structure of sulfur doped epitaxial gallium arsenide layers were investigated using a complex of methods. The experimental data indicate that the sulfur atoms can exist in the GaAs lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7c5f603d28f4422576a400cea6155d
https://doi.org/10.1007/bf00896179
https://doi.org/10.1007/bf00896179
Publikováno v:
Soviet Physics Journal. 18:1258-1264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192df6e15e288bcba2821a9754d8bc7d
https://doi.org/10.1007/bf00892718
https://doi.org/10.1007/bf00892718
Publikováno v:
Soviet Physics Journal. 22:157-161
Electron-microscope investigations show that in the SiCl4,-H2 system at sufficiently high purity of the substrate surface and the gas-phase mixture in a low-temperature process, morphologically perfect epitaxial layers of silicon grow by a step-layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd4f23774d2bc6d1ac01b8d6c95e5d4
https://doi.org/10.1007/bf00892008
https://doi.org/10.1007/bf00892008
Publikováno v:
Soviet Physics Journal. 28:149-153
The element composition and crystal structure of a second phase forming growth microdefects were investigated by electron microscopy, reflection electron diffraction, and electron-probe microanalysis at various stages of the gas-phase epitaxy of gall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d947adee7cd522afc8f3b2c4af7de6b0
https://doi.org/10.1007/bf00912512
https://doi.org/10.1007/bf00912512
Publikováno v:
Soviet Physics Journal. 19:31-37
The effect of dopants (zinc, tellurium) on the microrelief of the growth surface of autoepitaxial gallium arsenide layers is considered. It is shown that the type of dopant exerts a considerable effect on the characteristics of the microstep structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98d7671e617b7ec5d20c868c2764271c
https://doi.org/10.1007/bf00894311
https://doi.org/10.1007/bf00894311