Zobrazeno 1 - 10
of 11
pro vyhledávání: '"L. M. Karpova"'
Autor:
L. M. Karpova
Publikováno v:
Review of Omsk State Pedagogical University. Humanitarian research. :14-19
The article is devoted to the problem of identifying the content and use of the concept “new ethics” in the journalistic, philosophical and cultural Russian-language literature of recent years. The author reveals the internally contradictory natu
Autor:
L. M. Karpova, T. V. Panchenko
Publikováno v:
Journal of Physics and Electronics. 28:29-32
The results of an experimental study of the effect of nonstoichiometric defects in oxygen and the Bi:Si ratio, as well as Cr ions, on the photoconductivity of Bi12SiO20 crystals are presented. It is shown that varying the annealing conditions allows
Autor:
L. M. Karpova, T. V. Panchenko
Publikováno v:
Journal of Physics and Electronics. 28:25-28
The effect of chromium and manganese ions on the dielectric properties of Bi12SiO20 crystals is studied by the dielectric spectroscopy methods in the sound frequency range in the temperature range 280 – 800 K.
Publikováno v:
Ukrainian Journal of Physics; Vol. 66 No. 11 (2021); 988
Український фізичний журнал; Том 66 № 11 (2021); 988
Український фізичний журнал; Том 66 № 11 (2021); 988
The polarization processes in Bi12SiO20 crystals doped with Fe (Bi12SiO20 : Fe) in the temperature interval 300–800 K are studied by the thermoactivation spectroscopy methods. The temperature dependences of the thermostimulated depolarization (TSD)
Autor:
T. V. Panchenko, L. M. Karpova
Publikováno v:
Journal of Physics and Electronics. 27:85-88
The temperature-frequency dependences of the complex dielectric permittivity ε and the voltage-farad characteristics of undoped and aluminum doped Bi12SiO20 crystals are studied before and after their polarization. It is shown that Al ions in the Bi
Publikováno v:
Ferroelectrics. 281:67-77
Frequency-temperature characteristics of dielectric permittivity and loss factor of Bi 12 SiO 20 crystals doped by Cr and Mn ions have been carried out in audio frequency range in temperature interval 290 to 800 K. Dielectric anomalies of relaxation
Publikováno v:
Physics of the Solid State. 42:689-693
Autor:
L. M. Karpova, T. V. Panchenko
Publikováno v:
Physics of the Solid State. 41:1460-1463
The thermally stimulated depolarization currents and the temperature dependences of optical absorption are investigated. Interaction processes between defects are observed. A model consisting of association-dissociation of quasidipoles in the form of
Publikováno v:
Ferroelectrics. 214:287-294
The method of thermally stimulated depolarization currents was used to investigate electrically active defects in Bi12SiO20 doped with Mn and Cr-ions. The activation energy and the charge localized at these defects during the polarization processes w
Publikováno v:
Physics of the Solid State. 39:1085-1090
A study is reported of the temperature and frequency dependences of the permittivity and losses in Cr-doped Bi12SiO20 crystals at sonic frequencies and in the range 300–800 K. A number of dielectric anomalies and a close-to-linear Cole-Cole diagram