Zobrazeno 1 - 10
of 24
pro vyhledávání: '"L. M. Kapitanchuk"'
Autor:
Yu. Yu. Bacherikov, L. M. Kapitanchuk, O.B. Okhrimenko, O. S. Lytvyn, A. M. Svetlichnyi, N. I. Berezovska, R. V. Konakova
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 4, Pp 360-364 (2018)
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of
Autor:
L. M. Kapitanchuk, O.I. Hetman
Publikováno v:
Powder Metallurgy and Metal Ceramics. 57:410-420
The paper examines how the emission characteristics of impregnated M-type cathodes depend on variation in the film composition and structure in the cathode operation process. Diffusion porosity has been established to appear in the 49.5% Os–49.5% I
Autor:
L. M. Kapitanchuk, E. N. Polyarus, Vladimir A. Lavrenko, A. P. Umanskii, V. A. Shvets, V. N. Talash
Publikováno v:
Powder Metallurgy and Metal Ceramics. 55:195-200
The effect of the amount of chromium diboride additives in the NiAl intermetallic alloy on the corrosion resistance of composites in a 3 % NaCl aqueous solution simulating sea water, using anodic polarization curves, is studied. It is demonstrated th
Publikováno v:
Powder Metallurgy and Metal Ceramics. 54:53-59
The influence of chromium diboride additions on the tribotechnical characteristics of NiAl–CrB2 composite coatings in friction against a counterface made of NiAl plasma-sprayed coating is studied. The friction surfaces of the plasma-sprayed composi
Autor:
L. M. Kapitanchuk, V. N. Jmerik, V. N. Sheremet, P. N. Romanets, A. V. Sachenko, P. O. Saja, N. V. Safryuk, Pavel N. Brunkov, V. P. Kladko, Alexander Belyaev, Sergei Ivanov, N. S. Boltovets, R. V. Konakova
Publikováno v:
Semiconductors. 49:461-471
The temperature dependences of the contact resistivity (ρ c ) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 1018 cm−3 in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly inc
Autor:
Alexander Belyaev, N. S. Boltovets, Yu. N. Sveshnikov, R. V. Konakova, V. N. Sheremet, L. M. Kapitanchuk, A. S. Pilipchuk, A. V. Sachenko
Publikováno v:
Semiconductors. 48:1308-1311
The temperature dependence of the contact resistivity ρ c (T) of Au-Ti-Al-Ti-n +-GaN ohmic contacts is studied experimentally and substantiated theoretically in the temperature range T = 4.2–300 K. It is shown that the saturation portion of ρ c (
Publikováno v:
International Journal on Algae. 16:250-255
Autor:
N. S. Boltovets, V. P. Kladko, Alexander Belyaev, A. V. Sachenko, V. N. Panteleev, Yu. V. Zhilyaev, L. M. Kapitanchuk, R. V. Konakova, A. V. Naumov, Ya. Ya. Kudryk, V. N. Sheremet
Publikováno v:
Semiconductors. 47:1180-1184
The temperature dependences of the contact resistance ρ c (T) of ohmic Pd-Ti-Pd-Au contacts to n-GaN and n-AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρ c (T) for both contacts contain portions of expone
Autor:
N. S. Boltovets, Ya. Ya. Kudryk, R. V. Konakova, Vitaliy Kostylyov, V. N. Sheremet, A. V. Sachenko, V. P. Kladko, Alexander Belyaev, L. M. Kapitanchuk, A. O. Vinogradov
Publikováno v:
Semiconductors. 47:449-454
Anomalous temperature dependences of the specific contact resistance ρc(T) of Pd2Si-Ti-Au ohmic contacts to lapped n-Si with dopant concentrations of 5 × 1016, 3 × 1017, and 8 × 1017 cm−3 have been obtained. The anomalous dependences of ρc(T)
Autor:
L. M. Kapitanchuk, S. V. Novitskii, N. S. Boltovets, Ya. Ya. Kudryk, V. N. Sheremet, A. V. Sachenko, M. A. Yagovkina, I. S. Tarasov, V. N. Ivanov, Alexander Belyaev, V. V. Milenin, R. V. Konakova, D. A. Sakseev, A. V. Bobyl
Publikováno v:
Semiconductors. 46:334-341
A new mechanism describing the rise in the contact resistance ρ c of ohmic contacts to n-n +-n ++-GaAs(GaP, GaN, InP) structures with increasing measurement temperature T, experimentally observed in the temperature range 100–400 K, is suggested on