Zobrazeno 1 - 10
of 26
pro vyhledávání: '"L. M. Casas"'
Publikováno v:
Scanning. 17:51-56
Interface morphology, phase composition, and elemental diffusion of Pt/Ti/Ge/Pd ohmic contacts to both n and p+-GaAs have been investigated as a function of annealing temperature. Structural and chemical results were correlated with specific contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaea9534513c4382159f4a44e6408900
https://doi.org/10.1002/sca.4950170107
https://doi.org/10.1002/sca.4950170107
Publikováno v:
Scanning. 18:379-384
Interfacial microstructure and phase composition of PtTiGePd ohmic contacts to heavily C-doped AlGaAs were investigated as a function of annealing temperatures. Results of the material analyses were used to explain the specific contact resistances me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0465c796b7140e33f29c5909f86fe45
https://doi.org/10.1002/sca.1996.4950180509
https://doi.org/10.1002/sca.1996.4950180509
Publikováno v:
Journal of Applied Physics. 77:5225-5230
Elemental diffusion, interfacial microstructure, and phase composition of Pt/Ti/Ge/Pd ohmic contacts to heavily C‐doped Al0.26Ga0.74As were investigated at several annealing temperatures. Results of the material analyses were used to explain the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65136efa388998f7a0da3790736583fa
https://doi.org/10.1063/1.359272
https://doi.org/10.1063/1.359272
Publikováno v:
Journal of The Electrochemical Society. 142:1640-1643
Paraelectric lead lanthanum titanate (PLT) thin films have been prepared by a reactive dc magnetron sputtering system using a multicomponent metal target. The surface area control of each element on the target markedly facilitates the fabrication of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::979a4ab113eadaa5917d72c9fadf5c3c
https://doi.org/10.1149/1.2048629
https://doi.org/10.1149/1.2048629
Publikováno v:
Journal of Electronic Materials. 23:991-996
The results of electrical and structural characterization of a GeMoW ohmic contact to n-type GaAs with a 100A thick, In0.5Ga0.5As cap layer are presented. Electrical characterization demonstrates ohmic behavior over a wide annealing temperature range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad7a3fe20b719f0099113a8d8cbeb3c
https://doi.org/10.1007/bf02655375
https://doi.org/10.1007/bf02655375
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1904-1909
Interface morphology, phase composition, and elemental diffusion of Pt/Ti/Ge/Pd ohmic contacts to both n+‐ and p+‐GaAs have been investigated as a function of annealing temperature. Structural and chemical results were correlated with specific co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf0a239e1d90a314d88c01fbb110c27
https://doi.org/10.1116/1.578980
https://doi.org/10.1116/1.578980
Autor:
H. S. Lee, A. Lapore, A. DeAnni, Melanie W. Cole, L. W. Yang, L. M. Casas, M. Wade, Kenneth A. Jones, Yicheng Lu, W. Y. Han
Publikováno v:
Applied Physics Letters. 67:273-275
Ohmic contacts to heavily C‐doped AlGaAs were made using PdGeTiPt that had specific contact resistances Rc, as low as 1.7×10−6 Ω cm2 when annealed at 600 °C. The less heavily doped samples annealed at temperatures between 350 and 500 °C were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0ed36107aded97265334deb9b1cfa4
https://doi.org/10.1063/1.114780
https://doi.org/10.1063/1.114780
Publikováno v:
Applied Physics Letters. 64:2697-2699
Single crystal germanium films were deposited on (100) GaAs and InGaP substrates, and highly oriented gold films were deposited on the germanium films by ultrahigh vacuum E‐beam evaporation. They were characterized by double crystal x‐ray diffrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ec9c3c3d88351ff8e269ce5240f37ce
https://doi.org/10.1063/1.111495
https://doi.org/10.1063/1.111495
Publikováno v:
Scopus-Elsevier
Lead lanthanum titanate (PLT, La=28 mol %) thin films were prepared by a multi-element metal target using reactive dc magnetron sputtering system. A post-deposition annealing treatment was applied to all as-deposited PLT thin films at the temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::935ef122209620e35e2029ae98dbd4b4
https://doi.org/10.1109/isaf.1994.522405
https://doi.org/10.1109/isaf.1994.522405
Autor:
L. M. Casas, D. W. Eckart
Publikováno v:
Applied Physics Letters. 63:1041-1043
Layer thicknesses of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb785d817577ad0c7dfb8a8811abee7f
https://doi.org/10.1063/1.109828
https://doi.org/10.1063/1.109828