Zobrazeno 1 - 10
of 17
pro vyhledávání: '"L. M. B. Alldredge"'
Autor:
Adrian Podpirka, L. M. B. Alldredge, Steven W. Kirchoefer, Wontae Chang, Mark E. Twigg, Jeffrey M. Pond
Publikováno v:
Thin Solid Films. 548:178-185
The structure and composition of Ba0.5Sr0.5TiO3 thin films, sputter deposited on (001) MgO substrates, have been characterized by transmission electron microscopy. Deviations in film stoichiometry are seen to strongly correlate with the structural an
Publikováno v:
Nano Letters. 11:988-992
We show here, using fundamental energy storage relationships for capacitors, that there are severe constraints upon what can be realized utilizing ferroelectric materials as FET dielectrics. A basic equation governing all small signal behavior is der
Autor:
Mairbek Chshiev, Yayoi Takamura, L. M. B. Alldredge, Rajesh V. Chopdekar, Elke Arenholz, William H. Butler, Yves Idzerda, J. S. Bettinger, M. Liberati, Yuri Suzuki, J.R. Neulinger, Angelica M. Stacy
Publikováno v:
Journal of Magnetism and Magnetic Materials. 318:65-73
We report on the successful synthesis, magnetism and transport of highly spin-polarized chalcogenide thin films of CuCr 2 Se 4 , which are promising candidates for spin-based electronic applications. We also present electronic structure calculations
Autor:
L. M. B. Alldredge, Yuri Suzuki
Publikováno v:
Applied Physics Letters. 85:437-439
We have fabricated epitaxial La0.7Sr0.3MnO3∕La0.35Ca0.65MnO3∕La0.7Sr0.3MnO3 trilayer magnetic tunnel junctions in order to produce high-quality interfaces through the use of an isostructural barrier layer. The barrier we have chosen (La0.35Ca0.65
Autor:
Rajesh V. Chopdekar, Elke Arenholz, J. S. Bettinger, Brittany B. Nelson-Cheeseman, L. M. B. Alldredge, Yuri Suzuki
Publikováno v:
Physical Review B-Condensed Matter and Materials Physics, vol 76, iss 22
Nelson-Cheeseman, BB; Chopdekar, RV; Alldredge, LMB; Bettinger, JS; Arenholz, E; & Suzuki, Y. (2007). Probing the role of the barrier layer in magnetic tunnel junction transport. Physical Review B-Condensed Matter and Materials Physics, 76(22). doi: 10.1103/PhysRevB.76.220410. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/35b9k5xf
Physical Review B, vol 76, iss 22
Nelson-Cheeseman, BB; Chopdekar, RV; Alldredge, LMB; Bettinger, JS; Arenholz, E; & Suzuki, Y. (2007). Probing the role of the barrier layer in magnetic tunnel junction transport. Physical Review B-Condensed Matter and Materials Physics, 76(22). doi: 10.1103/PhysRevB.76.220410. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/35b9k5xf
Physical Review B, vol 76, iss 22
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin p
Publikováno v:
Applied Physics Letters. 95:222902
The microwave properties of BaTiO3 and Ba0.5Sr0.5TiO3 films were characterized as a function of in-plane film strain, crystallographic direction, film distortion, and dc bias. The strain dependence of BaTiO3 and Ba0.5Sr0.5TiO3 films showed an opposit
Autor:
Steven W. Kirchoefer, Hongrui Liu, Vitaliy Avrutin, Wontae Chang, Emmanuel Rowe, H. Y. Liu, L. M. B. Alldredge, Hadis Morkoç, Ümit Özgür, Jacob H. Leach, Jeffrey M. Pond, Bo Xiao
Publikováno v:
Applied Physics Letters. 95:212901
High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire (112¯0) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasm
Autor:
Wontae Chang, Hongrui Liu, Hadis Morkoç, Ümit Özgür, L. M. B. Alldredge, Emmanuel Rowe, Bo Xiao, Steven W. Kirchoefer, Xing Gu, Jacob H. Leach, Jeffrey M. Pond, Vitaliy Avrutin
Publikováno v:
Applied Physics Letters. 95:012907
BaxSr1−xTiO3 is ideally suited as a tunable medium for radio frequency passive component. In this context we have studied the effect of biaxial strain on the dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films grown epitaxially on
Publikováno v:
Applied Physics Letters. 94:052904
The dielectric properties of sputter-deposited Ba1−xSrxTiO3 (BST) thin films on (001) MgO substrates with in-plane or out-of-plane tetragonal lattice structure distortions were characterized as a function of temperature. A temperature-dependent int
Publikováno v:
Journal of Applied Physics. 105:034115
Device loss of BaxSr1−xTiO3 (BST, x=0.5 and 0.6) film-based interdigitated capacitors as a function of frequency (1–20 GHz) at room temperature is observed to range broadly from less than 0.01 to larger than 1 while the commonly observed device l