Low-Cost/High-Precision Smart Power Supply for Data Loggers

Autor: Marcio L. M. Amorim, Gabriel Augusto Ginja, João Paulo Carmo, Melkzedekue Moraes Alcântara Moreira, Adriano Almeida Goncalves Siqueira, Jose A. Afonso

Publikováno v: Energies, Vol 16, Iss 1, p 278 (2022)

This paper presents a low-cost/high-precision smart power supply for application on data loggers. The microprocessor unit is the brain of the system and manages the events and was optimized to provide electrical energy to the electronic devices under

Externí odkaz: https://doaj.org/article/d8ddc1d4f9d94222bf7af6cb592c1691

Lattice location of implanted Co in heavily doped $$n^+$$ n + - and $$p^+$$ p + -type silicon

Autor: L. M. Amorim, Manuel Ribeiro da Silva, Ulrich Wahl, Lino Miguel da Costa Pereira, João P. Araújo, J. G. Correia, Daniel Silva

Publikováno v: Applied Physics A. 123

We have studied the influence of electronic doping on the preferred lattice sites of implanted $${^{61}\text{Co}}$$ , and the related stabilities against thermal annealing, in silicon. Using the $$\beta ^-$$ emission channeling technique we have iden

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4172f1e673c2b420c5051bf830134d5f
https://doi.org/10.1007/s00339-017-0870-0

Direct observation of the lattice sites of implanted manganese in silicon

Autor: Ulrich Wahl, Daniel José Cardoso da Silva, Lino Miguel da Costa Pereira, Stefan Decoster, J. G. Correia, João P. Araújo, L. M. Amorim, Manuel Ribeiro da Silva

Publikováno v: Applied Physics A. 122

Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, n+ and p+) in the highly dilute regime. Three different

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f4dd4f9774b3919200b9ae650887776
https://doi.org/10.1007/s00339-016-9724-4

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE facility

Autor: A. R. G. Costa, Krish Bharuth-Ram, E. David-Bosne, P. Miranda, M.R. da Silva, J. G. Correia, V. Augustyns, L. M. Amorim, Ulrich Wahl, D. J. Silva, J. P. Araujo, Kristiaan Temst, André Vantomme, L. M. C. Pereira

We give an overview on the historical development and current program for lattice location studies at CERN’s ISOLDE facility, where the EC-SLI (Emission Channeling with Short-Lived Isotopes) collaboration maintains several setups for this type of e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f647dad469baa44895a2491ce27b0162
http://cds.cern.ch/record/2243054

Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si

Autor: Yosuke Shimura, Sven Peters, N. M. Santos, Jean-Pierre Locquet, L. M. Amorim, Tatsuro Maeda, Kristiaan Temst, Noriyuki Uchida, Ruben Lieten, André Vantomme, Thierry Conard, Sergey I. Nikitenko, Claudia Fleischmann

Publikováno v: ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2014, 3 (12), pp.P403-P408. ⟨10.1149/2.0091412jss⟩
'ECS Journal of Solid State Science and Technology ', vol: 3, pages: P403-P408 (2014)

International audience; We have investigated the structural and optical properties of metastable amorphous and crystalline GeSn layers on Si substrates. The as-deposited amorphous layers crystallize during annealing at 500 degrees C. This transition

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32014bd14a17e39dc1bf8309775efe24
https://hal.archives-ouvertes.fr/hal-01572937