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Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance

Publikováno v: 2014 16th International Conference on Transparent Optical Networks (ICTON)
2014 16th International Conference on Transparent Optical Networks (ICTON), Jul 2014, Graz, Austria. ⟨10.1109/ICTON.2014.6876505⟩
ICTON 2014-16th International Conference on Transparent Optical Networks
ICTON 2014-16th International Conference on Transparent Optical Networks, Jul 2014, Graz, Austria. pp.1-4, ⟨10.1109/ICTON.2014.6876505⟩
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International audience; In this work we will present the objectives and last results of the FP7-ICT-2013-11-619456 SITOGA project. The SITOGA project will address the integration of transition metal dioxides (TMO) materials in silicon photonics and C

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60bdc3eb47be1e3e354dfed0b840309e
https://doi.org/10.1109/icton.2014.6876505

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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Publikováno v: Physical Review Letters
Physical Review Letters, American Physical Society, 2012, 109, pp.106603. ⟨10.1103/PhysRevLett.109.106603⟩
Physical Review Letters, 2012, 109, pp.106603. ⟨10.1103/PhysRevLett.109.106603⟩

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bb22d09e999fcf829dfe473d22096f8
http://arxiv.org/abs/1203.6491

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Electrical spin injection and detection at Al$-2$O$_3$/$n$-type germanium interface using three terminal geometry

Autor: J. Peiro, Henri Jaffrès, J.-M. George, A. Barski, Alain Marty, C. Beigné, C. Vergnaud, A. Jain, Emmanuel Augendre, J. C. Le Breton, Matthieu Jamet, L. Notin, L. Louahadj, Vincent Baltz, Stéphane Auffret

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 99, pp.162102. ⟨10.1063/1.3652757⟩
Applied Physics Letters, 2011, 99, pp.162102. ⟨10.1063/1.3652757⟩

International audience; In this letter, we report on electrical spin injection and detection in n-type germanium-on-insulator using a Co/Py/Al$-2$O$_3$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation sign

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::750e035de232af886ff504a1219cca48
https://hal.archives-ouvertes.fr/hal-01683844

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Electrical and thermal spin accumulation in germanium

Autor: A. Jain, A. Barski, Matthieu Jamet, Vincent Baltz, Emmanuel Augendre, J. C. Le Breton, L. Louahadj, Pascale Bayle-Guillemaud, Henri Jaffrès, Céline Vergnaud, Clarisse Ducruet, J.-M. George, Eric Prestat, Jean-Philippe Attané, C. Portemont, Laurent Vila, Alain Marty, J. Peiro

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2012, 101, pp.022402. ⟨10.1063/1.4733620⟩
Applied Physics Letters, 2012, 101, pp.022402. ⟨10.1063/1.4733620⟩

In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be5ae4facc48f03870513c2b215e5a0c
https://doi.org/10.1063/1.4733620

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