Zobrazeno 1 - 10
of 251
pro vyhledávání: '"L. Lottermoser"'
Autor:
I Greving, M Ogurreck, F Marschall, A Last, F Wilde, T Dose, H Burmester, L Lottermoser, M Müller, C David, F Beckmann
Publikováno v:
Journal of physics / Conference Series, 849 (1), Art.Nr.: 012056
Greving, I.; Ogurreck, M.; Marschall, F.; Last, A.; Wilde, F.; Dose, T.; Burmester, H.; Lottermoser, L.; Mueller, M.; David, C.; Beckmann, F.: Nanotomography endstation at the P05 beamline: Status and perspectives. In: Journal of Physics: Conference Series . Vol. 849 (2017) 012056. (DOI: /10.1088/1742-6596/849/1/012056)
Greving, I.; Ogurreck, M.; Marschall, F.; Last, A.; Wilde, F.; Dose, T.; Burmester, H.; Lottermoser, L.; Mueller, M.; David, C.; Beckmann, F.: Nanotomography endstation at the P05 beamline: Status and perspectives. In: Journal of Physics: Conference Series . Vol. 849 (2017) 012056. (DOI: /10.1088/1742-6596/849/1/012056)
The Imaging Beamline IBL/P05 at the DESY storage ring PETRA III, operated by the Helmholtz-Zentrum Geesthacht, has two dedicated endstations optimized for micro- and nanotomography experiments [1-3]. Here we present the status of the nanotomography e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70e7a23b6a9ae47807e4960692e57325
https://publikationen.bibliothek.kit.edu/1000072223/4259095
https://publikationen.bibliothek.kit.edu/1000072223/4259095
Autor:
Cacciuttolo, Carlos1,2 (AUTHOR) carlos.cacciuttolo@gmail.com, Atencio, Edison3 (AUTHOR), Komarizadehasl, Seyedmilad4 (AUTHOR) milad.komary@upc.edu, Lozano-Galant, Jose Antonio2 (AUTHOR)
Publikováno v:
Sensors (14248220). Nov2024, Vol. 24 Issue 21, p6971. 31p.
Autor:
Mourits Nielsen, L. Lottermoser, Robert Feidenhans'l, Gerald Falkenberg, Jeff Baker, J. H. Zeysing, Robert L. Johnson, F. Berg-Rasmussen, Oliver Bunk
Publikováno v:
Physical Review B. 59:12228-12231
A detailed structural model for the indium-induced $\mathrm{Si}(111)\ensuremath{-}(4\ifmmode\times\else\texttimes\fi{}1)$ surface reconstruction has been determined by analyzing an extensive set of x-ray-diffraction data recorded with monochromatic $
Autor:
R. Feidenhans'l, Gerald Falkenberg, L. Lottermoser, Oliver Bunk, Robert L. Johnson, F. Berg-Rasmussen, M. Nielsen, J. H. Zeysing
Publikováno v:
Applied Surface Science. 142:88-93
A detailed structural model of the indium-induced Ge(103)-(1×1) surface reconstruction has been established by analyzing an extensive set of X-ray data recorded with synchrotron radiation. Our results show that models with one indium and one germani
Autor:
E. Landemark, Detlef-M. Smilgies, T. van Gemmeren, L. Lottermoser, O. Bunk, Robert L. Johnson, Mourits Nielsen, Robert Feidenhans'l
Publikováno v:
Surface Review and Letters. :1043-1052
The surface geometry of the 1×1 and 1×2 phases of bismuth on GaSb(110) has been determined using surface X-ray diffraction with synchrotron radiation. The bismuth atoms form zigzag chains along the [Formula: see text] direction of the substrate. Fo
Autor:
T. van Gemmeren, Oliver Bunk, Robert L. Johnson, Mourits Nielsen, Robert Feidenhans'l, L. Lottermoser, Gerald Falkenberg
Publikováno v:
Surface Science. 414:254-260
Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional
Autor:
Gerald Falkenberg, A.J. Steinfort, Jennifer L. Baker, F. Berg Rasmussen, Mourits Nielsen, Robert Feidenhans'l, L. Lottermoser, P.M.L.O. Scholte, Robert L. Johnson
Publikováno v:
Physica B: Condensed Matter. 248:1-8
Nanoscale clusters are often formed during heteroepitaxial crystal growth. Misfit between the lattice parameter of the substrate and the adsorbate stimulates the formation of regular clusters with a characteristic size. The well-known “hut-clusters
Autor:
L. Lottermoser, Gerald Falkenberg, L. Seehofer, E. Landemark, Mourits Nielsen, Robert Feidenhans'l, Oliver Bunk, Robert L. Johnson
Publikováno v:
Surface Science. 381:L614-L618
Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structural model for the Ge(103)-(4 × 1) reconstruction. Each unit cell contains two (103) double steps, which gives rise to the formation of stripes of Ge at
Autor:
H. T. Anyele, L. Seehofer, Clarence Cherian Matthai, A. H. Levermann, Robert L. Johnson, P .B. Howes, John Emyr MacDonald, K. A. Edwards, L. Lottermoser, Gerald Falkenberg, R. Feidenhans'l
Publikováno v:
Applied Surface Science. :124-129
We have studied the atomic structure of the View the MathML source reconstruction induced by adsorption of about 1.1 monolayers of Sn on Si(111) using surface X-ray diffraction (SXRD) and scanning tunnelling microscopy (STM). The experimentally obtai
Autor:
Mourits Nielsen, Robert Feidenhans'l, Robert L. Johnson, L. Seehofer, E. Landemark, Detlef-M. Smilgies, L. Lottermoser, Gerald Falkenberg
Publikováno v:
Surface Science. :430-434
Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500°C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut c