Zobrazeno 1 - 10
of 100
pro vyhledávání: '"L. Leprince"'
Publikováno v:
Europhysics Letters (EPL). 46:479-485
We investigate the strain evolution in low strained gratings before and after embedding in the substrate material by high-resolution grazing incidence X-ray diffraction and elasticity theory. For the experiments, we use a non-coplanar multiple crysta
Autor:
Jean-Michel Gérard, N. Lebouché, F. Houzay, L. Leprince, F. Barthe, J. M. Moison, J. Y. Marzin
Publikováno v:
Applied Surface Science. 92:526-531
Spontaneous patterning of strained deposits can be put to use for fabricating quantum dots. We evaluate this technique in the case of InAs GaAs . It is shown that the requirements for optoelectronic devices (dot size, homogeneity, optical yield, etc.
Autor:
L, LEPRINCE-RINGUET
Publikováno v:
Journal de radiologie, d'electrologiearchives d'electricite medicale. 27(3-4)
Publikováno v:
Physical Review B. 46:7923-7926
Photoemission measurements at the InAs/GaAs (001) interfaces following insertion of interfacial silicon reveal large core-level shifts. For InAs-on-GaAs junctions, Si-induced potential steps across the interface, up to 0.2 eV for one monolayer of Si,
Publikováno v:
Journal of Applied Physics. 85:2428-2430
Wet thermal oxidation of a strained balanced superlattice structure, epitaxially grown on InP and including high Al content layers, is investigated. The oxidation kinetics are studied as a function of temperature and oxidation duration. The results a
Publikováno v:
Applied Physics Letters. 70:2861-2863
GaAsN layers with good structural quality and surface morphology have been successfully grown on a GaAs substrate using atmospheric pressure metal organic vapor phase epitaxy. A new combination of precursors namely, dimethylhydrazine for nitrogen and
Publikováno v:
Applied Physics Letters. 64:196-198
The deposition of InAs on GaAs proceeds first by two‐dimensional (2D) growth and above a 1.75‐monolayer coverage by the formation of single‐crystal dots on a residual 2D wetting layer. By atomic force microscopy measurements, we show that the f
Publikováno v:
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).
We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using atmospheric pressure MOVPE. Dimethylhydrazine and tertiarybutylarsine have been employed as sources of nitrogen and arsenic respectively. To investigate the incorporation beh
Autor:
N. Darowski, Ullrich Pietsch, L. Leprince, G. T. Baumbach, A. Talneau, D. Lübbert, J. Schneck
Multilayered gratings have been investigated by high-resolution grazing incidence diffraction, employing non-coplanar triple crystal diffractometry. A theoretical treatment has been developed based on the distorted wave Born approximation for multila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::089d1155845e8360a90505598ab814f9
https://publishup.uni-potsdam.de/frontdoor/index/index/docId/23078
https://publishup.uni-potsdam.de/frontdoor/index/index/docId/23078
Publikováno v:
Revue Française d'Allergologie. 53:373