Zobrazeno 1 - 10
of 17
pro vyhledávání: '"L. L. Nugaeva"'
Publikováno v:
Technical Physics. 52:86-92
The electrical properties of AgPbSbS3, AgSnAsS3, AgPbSbSe3, AgPbAsSe3, AgSnSbSe3, CuSnSbS3, CuSnSbSe3, CuSnAsSe3, AgSnSbS3, and AgPbAsS3 chalcogenides are studied by the method of impedance spectroscopy with the aim of searching for materials with im
Autor:
L. L. Nugaeva, E. F. Shakirov, O. L. Kheifets, A. N. Babushkin, A. S. Volegov, A. V. Tebenkov, N. V. Melnikova
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics
A procedure for synthesizing AgFeAsSe3 and AgFeSbSe3 is presented, and their electric and magnetic properties are investigated over a wide range of temperatures, pressures, and magnetic field variation. At 100-400K, the samples are characterized by s
Autor:
Ya. L. Kobelev, N. V. Mel'nikova, V. B. Zlokazov, L. Ya. Kobelev, O. L. Kheifets‐Kobeleva, L. L. Nugaeva
Publikováno v:
physica status solidi (c). 1:299-302
The electrical properties of AgGeSbS3xSe3(1-x) (x = 0.4-0.7) were investigated by means of impedance measurements in the frequency range between 10 Hz and 800 kHz and at temperatures between 78 K and 500 K. In all investigated chalcogenides ionic con
Publikováno v:
Solid State Ionics. 146:415-421
The temperature dependences of electrical conductivity and dielectric permittivity of (AS) 1− x (AgSbS 2 ) x , (A=Ge, Sn, Pb) were investigated by means of impedance measurements in the frequency range between 10 −2 and 10 5 Hz and at temperature
Autor:
L. L. Nugaeva, A. N. Babushkin, E. F. Shakirov, O. L. Kheifets, N V Melnikova, A. L. Filippov
Publikováno v:
Physics of the Solid State
The chalcogenides Cu 1 - xAg xGeAsSe 3 (x = 0. 5, 0. 8, 0. 9) have been synthesized and their electrical properties have been studied at low temperatures. Compounds of this type are electron-ionic conductors with a mixed character of conduction. It h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d20f525dc6366dade2335322cfdde398
https://elar.urfu.ru/handle/10995/51136
https://elar.urfu.ru/handle/10995/51136
Publikováno v:
Low Temperature Physics; 10/1/2022, Vol. 48 Issue 10, p787-790, 4p
Autor:
Saipulaeva, L.1 l.saypulaeva@gmail.com, Gabibov, F.1, Mel'nikova, N.2 nvm.melnikova@gmail.com, Alibekov, A.1, Kheifets, O.2, Babushkin, A.2, Kurochka, K.2
Publikováno v:
Journal of Experimental & Theoretical Physics. Nov2012, Vol. 115 Issue 5, p918-924. 7p.
Autor:
Kheifets, O.1 olga.kobeleva@usu.ru, Shakirov, E.1, Melnikova, N.1, Filippov, A.1, Nugaeva, L.1
Publikováno v:
Semiconductors. Jul2012, Vol. 46 Issue 7, p943-947. 5p.
Autor:
Melnikova, N. V., Kolosov, V. Yu., Zarubin, V. Yu., Yushkov, A. A., Novoselov, E. S., Pryakhina, V. I.
Publikováno v:
AIP Conference Proceedings; 2019, Vol. 2174 Issue 1, p020040-1-020040-5, 5p
Publikováno v:
Technical Physics. Jan2007, Vol. 52 Issue 1, p86-92. 7p. 3 Charts, 6 Graphs.