Zobrazeno 1 - 2
of 2
pro vyhledávání: '"L. L. Makovskii"'
Autor:
L. L. Makovskii, N. B. Strokan
Publikováno v:
Soviet Atomic Energy. 25:882-885
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d55203fa248524945314fd625793db4
https://doi.org/10.1007/bf01121043
https://doi.org/10.1007/bf01121043
Publikováno v:
Physics of p-n Junctions and Semiconductor Devices ISBN: 9781475712346
The temperature and bias dependences of the capacitance of n’—n—p structures made of germanium corpensated by γ -ray generated radiation defects are explained using an equivalent circuit. It is demonstrated that the carrier energy distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883dba7be41f9a0cf91ad5265c117f99
https://doi.org/10.1007/978-1-4757-1232-2_32
https://doi.org/10.1007/978-1-4757-1232-2_32
