Zobrazeno 1 - 10
of 54
pro vyhledávání: '"L. L. Levenson"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1406-1410
Two ionized cluster beam (ICB) sources were used to deposit PbTiO3 films 300 nm thick onto Pt‐metallized, oxidized Si wafers 100 mm in diameter. Pb was deposited from one ICB source and Ti from the other. The deposition was carried out in a mixture
Publikováno v:
Integrated Ferroelectrics. 2:327-336
The Barium Magnesium Fluoride films have been deposited on p-Si wafers at a temperature in the range of 400-450°C in an ion assisted deposition system. X-ray diffraction analysis shows that the films are polycrystalline in nature. The BMF films were
Publikováno v:
Journal of Applied Physics. 70:1591-1595
Oxygen desorption experiments from YBa2Cu3O7−x (YBCO) and Bi2CaSr2Cu2O8+δ (BSCCO) superconductors were carried out using a quadrupole mass spectrometer for monitoring the desorbing species and x‐ray photoemission spectroscopy for surface charact
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:405-408
ErBa2Cu3O(7-x) films have been produced by simultaneous deposition of Er, Ba, and Cu from three ionized cluster beam (ICB) sources at acceleration voltages of 0.3 to 0.5 kV. Combining ozone oxidation with ICB deposition at 650 C eliminated any need o
Publikováno v:
Surface and Interface Analysis. 15:159-162
An ionized cluster beam (ICB) source was used to deposit A1 onto two types of silicon oxides. One was a thermal oxide generated by steam oxidation of Si at 900°C. The other was a P-doped oxide deposited on Si at 425°C. During Al deposition, 60 μm
Publikováno v:
MRS Proceedings. 239
An ionized cluster beam (ICB) source was used to deposit Pd onto oxidized silicon substrates. The ICB source was operated in both the neutral mode (no ionization and no acceleration) and in the ICB mode with ionization and acceleration voltages at 3
Publikováno v:
Journal of Vacuum Science and Technology. 14:475-478
Binding of nickel atoms deposited on a clean pyrolytic graphite surface is studied in ultrahigh vacuum using Auger electron spectroscopy (AES) and thermal desorption spectroscopy (TDS). The amount of deposition is measured with a quartz crystal micro
Publikováno v:
Journal of Vacuum Science and Technology. 16:359-362
The interface composition and bonding of thin organo–tin polymers, plasma‐deposited on Al, are determined by AES, ESCA, and pull testing. A tin oxide species is formed between the bulk organo–tin polymer and the Al surface within an interfacial
Autor:
L. L. Levenson, M.A. Smith
Publikováno v:
Thin Solid Films. 95:161-166
We report observation of deposition of SiO2 thin films on a variety of surfaces in nitric acid and hydrochloric acid solutions. Scanning electron microscopy shows that the films are composed of closely packed spheres 1000 A in diameter. Chemical iden
Publikováno v:
Applied Surface Science. :966-971
Evaluations of ellipsometer measurements on aluminum oxide ionized cluster beam (ICB) films formed by reactive deposition are presented here. Films deposited at accelerating voltages below 1.5 kV are shown to have an interface film, approximately one