Zobrazeno 1 - 9
of 9
pro vyhledávání: '"L. L. Clemen"'
Publikováno v:
Materials Science and Engineering: B. :187-196
Optical studies provide a great amount of information about acceptors in SiC. The optical recombination of neutral acceptor four particle (bound exciton) complexes has been observed in 4H, 6H, 15R and 3C SiC for Al; 4H, 6H and 3C SiC for Ga; and in 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a47c36791128b95d062eb05e4175ffd7
https://doi.org/10.1016/s0921-5107(98)00500-5
https://doi.org/10.1016/s0921-5107(98)00500-5
Autor:
L. L. Clemen, Wolfgang J. Choyke, Gerhard Pensl, David J. Larkin, H. S. Kong, Robert P. Devaty, T. Troffer, S. G. Sridhara
Publikováno v:
Journal of Applied Physics. 83:7909-7919
Two distinct boron-related centers are known in silicon carbide polytypes, one shallow (ionization energy ∼300 meV) and the other deep (∼650 meV). In this work, 4H SiC homoepitaxial films are intentionally doped with the shallow boron center by c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454b0a5a0992e402f9528217a89298a6
https://doi.org/10.1063/1.367970
https://doi.org/10.1063/1.367970
Autor:
M. Asif Khan, Mike F. MacMillan, S. Krishnankutty, Wolfgang J. Choyke, J. N. Kuznia, L. L. Clemen, Robert P. Devaty
Publikováno v:
Journal of Applied Physics. 80:2378-2382
Cathodoluminescence of AlN–GaN short period superlattice films was measured at 6 K, 77 K, and room temperature. The superlattice films were deposited using a switched atomic layer metalorganic chemical vapor deposition process onto a buffer layer o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4a75a998d2418e4b156c5f8e2a5961
https://doi.org/10.1063/1.363726
https://doi.org/10.1063/1.363726
Autor:
Wolfgang J. Choyke, Hiroyuki Matsunami, Robert P. Devaty, Akira Itoh, Gerhard Pensl, C. Peppermüller, T. Kimoto, Thomas Dalibor, L. L. Clemen, S.G. Sridhara
Publikováno v:
Applied Physics Letters. 67:2833-2835
4H‐SiC epilayers grown by chemical vapor deposition were characterized by Hall effect, admittance spectroscopy, low‐temperature photoluminescence, and deep level transient spectroscopy (DLTS). The nitrogen (N) donor activation energies were estim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0efe9b372b6974fc12e7eec9a9f22c83
https://doi.org/10.1063/1.114800
https://doi.org/10.1063/1.114800
Autor:
M. Yoganathan, L. L. Clemen, Robert P. Devaty, Ch. Hässler, Wolfgang J. Choyke, Gerhard Pensl
Publikováno v:
Applied Physics Letters. 65:1668-1670
We have observed intense line spectra in the neighborhood of 1.54 μm from erbium‐implanted samples of 4H, 6H, 15R, and 3C SiC. Samples were implanted to a fluence of about 1013 erbium ions/cm2 using four implant energies. An anneal at 1700 °C in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efac29df2c972277802e70dcb2f6545c
https://doi.org/10.1063/1.112908
https://doi.org/10.1063/1.112908
Autor:
David J. Larkin, H. S. Kong, John A. Edmond, Robert P. Devaty, J. A. Powell, Wolfgang J. Choyke, M. Yoganathan, L. L. Clemen, Mike F. MacMillan
Publikováno v:
Applied Physics Letters. 62:2953-2955
Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38ba8061d21fbaee4bed97be8804ce61
https://doi.org/10.1063/1.109627
https://doi.org/10.1063/1.109627
Autor:
J. A. Powell, L. G. Matus, Wolfgang J. Choyke, J. B. Petit, M. Yoganathan, James H. Edgar, J. W. Yang, L. L. Clemen, I. G. Jenkins, Pirouz Pirouz
Publikováno v:
Applied Physics Letters. 59:333-335
We have found that, with proper pregrowth surface treatment, 6H‐SiC single‐crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H‐SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da1c77bf097ec4cb7f4ca357c70a823
https://doi.org/10.1063/1.105587
https://doi.org/10.1063/1.105587
Autor:
J. W. Yang, Wolfgang J. Choyke, J. A. Powell, M. Yoganathan, James H. Edgar, I. G. Jenkins, L. G. Matus, J. B. Petit, Pirouz Pirouz, L. L. Clemen
Publikováno v:
Applied Physics Letters. 59:183-185
Both 3C‐SiC and 6H‐SiC single‐crystal films can be grown on vicinal (0001) 6H‐SiC wafers. We have found that oxidation can be a powerful diagnostic process for (1) ‘‘color mapping’’ the 3C and 6H regions of these films, (2) decorating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa62f25589f2df6000971160a5421e1a
https://doi.org/10.1063/1.105960
https://doi.org/10.1063/1.105960
Autor:
L. L. Clemen, K. K. Bajaj, Wolfgang J. Choyke, R. L. Messham, Zhe Chuan Feng, M. Yoganathan, J. Cen
Publikováno v:
MRS Proceedings. 326
A combined characterization of theoretical calculation and experimental measurements, including Raman scattering, photoluminescence and cross sectional transmission electron microscopy, has been made on GaAs-AlxGai1−xAs multiple quantum wells (MQW)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b18b522dc5d3601b378fa02265caef6
https://doi.org/10.1557/proc-326-359
https://doi.org/10.1557/proc-326-359