Zobrazeno 1 - 4
of 4
pro vyhledávání: '"L. L. Buresh"'
Autor:
T. Ridolfi, P. F. Williams, L. L. Buresh, B.L. Thomas, D.K. Scott, F. E. Peterkin, William C. Nunnally, B.J. Hankla
Publikováno v:
IEEE Transactions on Electron Devices. 37:2459-2465
Empirical information about surface flashover of silicon in a vacuum ambient which shows that in breakdown the current is carried primarily inside the semiconductor is presented. This observation shows that the physical processes responsible for flas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::057a009251bd8ab0fcd79ffa23ba9a72
https://doi.org/10.1109/16.64518
https://doi.org/10.1109/16.64518
Publikováno v:
Applied Physics Letters. 62:2236-2238
Semiconductors such as silicon and GaAs appear attractive for use in high voltage devices because of their high bulk dielectric strength. Typically, however, such devices fail at a voltage well below that expected due to a poorly understood, surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e675b5bb0431e6e09078b40b3fa3e0cf
https://doi.org/10.1063/1.109427
https://doi.org/10.1063/1.109427
Publikováno v:
SPIE Proceedings.
We present high-speed shutter and streak photographs synchronized with sample current measure- ments which show clearly that in surface flashover of silicon in a vacuum ambient the current flows pri-manly in the silicon, not in the ambient. We presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db4a1ce6cc36f5ec6a2d5be5475b30a4
https://doi.org/10.1117/12.25056
https://doi.org/10.1117/12.25056
Autor:
Buresh L
Publikováno v:
Sudebno-meditsinskaia ekspertiza [Sud Med Ekspert] 1968 Jul-Sep; Vol. 11 (3), pp. 46-7.