Zobrazeno 1 - 8
of 8
pro vyhledávání: '"L. L. Aksenova"'
Publikováno v:
Semiconductors. 49:1281-1284
The features of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions are investigated at low temperatures and upon “intrinsic” illumination with hv > 1.12 eV. It is shown that low-frequency self-oscillations rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf589ec0d87e4fd5c987bc374f18388
https://doi.org/10.1134/s1063782615100097
https://doi.org/10.1134/s1063782615100097
Autor:
L. L. Aksenova, E. S. Mashkova, E. V. Rakova, V. A. Molchanov, N.A. Kiselev, V. V. Roddatis, E.I. Givargizov, John L. Hutchison, A.N. Stepanova
Publikováno v:
Micron
Diamond single crystals were grown on the silicon whiskers by a hot filament chemical vapor deposition technique at the filament temperature about 2100degreesC and the temperature of support 800degreesC. Specimens were examined by SEM, TEM, HRTEM and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73700f6c384d68c801023d5488a3f49a
https://ora.ox.ac.uk/objects/uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
https://ora.ox.ac.uk/objects/uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
Autor:
J. L. Hatchison, E.I. Givargizov, E. V. Rakova, L. L. Aksenova, V. A. Molchanov, N. A. Kiselev, A.N. Stepanova, E. S. Mashkova
Publikováno v:
Crystallography Reports. 47:S159-S168
The data on the deposition, structure, and electric properties of crystalline diamond particles at silicon tips grown on single-crystal silicon substrates obtained over the last decade, mainly at the Institute of Crystallography of the Russian Academ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc199dfd31006f5a1f7363cf5d405483
https://doi.org/10.1134/1.1529970
https://doi.org/10.1134/1.1529970
Autor:
E.I. Givargizov, E. V. Rakova, Paul C. Nordine, L. L. Aksenova, A.V. Kuznetsov, A.N. Stepanova, Victor V. Zhirnov, P. S. Plekhanov
Publikováno v:
Diamond and Related Materials. 5:938-942
Preparation and field-emission characteristics of silicon tips coated by diamond particles are described. The particles grew by a hot-filament CVD process preferentially on the very ends of the tips. An explanation is given for the preferential depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f413eea2aeaea6109b5e9029774a82f
https://doi.org/10.1016/0925-9635(96)00524-9
https://doi.org/10.1016/0925-9635(96)00524-9
Autor:
E. V. Rakova, V.G. Galstyan, L. L. Aksenova, E.I. Givargizov, A.N. Kiselev, A.N. Stepanova, V. I. Muratova, Alexander V. Kuznetsov
Publikováno v:
Journal of Crystal Growth. 162:73-78
Growth of diamond particles on sharp silicon tips in a hot-filament CVD process was investigated. Highly preferential deposition of the particles on the ends of the tips has been found. An explanation is given for the phenomenon based on the idea tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc980920bc8ca18b125844e38ef1919
https://doi.org/10.1016/0022-0248(95)00945-0
https://doi.org/10.1016/0022-0248(95)00945-0
Publikováno v:
Materials Letters. 22:285-288
Heteroepitaxial single-crystal diamond particles were formed on sharpened Si tips in a hot-filament CVD process at increased content of atomic hydrogen in the vapor phase.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::605fe8366519f77fb02ace2830a3ef80
https://doi.org/10.1016/0167-577x(94)00260-6
https://doi.org/10.1016/0167-577x(94)00260-6
Autor:
E. V. Rakova, E.I. Givargizov, L. L. Aksenova, Victor V. Zhirnov, A.N. Stepanova, P. S. Plekhanov, A.N. Kiselev
Publikováno v:
Wide Band Gap Electronic Materials ISBN: 9789401040785
Negative electron affinity (NEA) of diamond as a property inherent in the material is known for a time [1]. Quite recently, the property has attracted a strong interest for applications in vacuum microelectronics and in other fields of modern science
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bcb5db4e51f3a3e926ae2b4336b50b3
https://doi.org/10.1007/978-94-011-0173-8_5
https://doi.org/10.1007/978-94-011-0173-8_5
Autor:
Klyachko N; Timiryazev Institute of Plant Physiology, Russian Academy of Science, Botanicheskaya ul. 35, Moscow. ifr@ippras.ru, Aksenova L, Dunaeva M, Kulikova A
Publikováno v:
Cell biology international [Cell Biol Int] 2000; Vol. 24 (6), pp. 351-8.