Boron doping of silicon rich carbides: Electrical properties

Autor: C. Summonte, M. Canino, M. Allegrezza, M. Bellettato, A. Desalvo, R. Shukla, b, I.P. Jain, I. Crupic, S. Milita, L. Ortolani, L. LópezConesa, S. Estradé, F. Peiró, B. Garrido

Publikováno v: Materials science & engineering. B, Solid-state materials for advanced technology 178 (2013): 551–558. doi:10.1016/j.mseb.2012.10.030
info:cnr-pdr/source/autori:C. Summonte, M. Canino, M. Allegrezza, M. Bellettato, A. Desalvo, R. Shukla,b, I.P. Jain, I. Crupic, S. Milita, L. Ortolani, L. LópezConesa, S. Estradé, F. Peiró, B. Garrido/titolo:Boron doping of silicon rich carbides: Electrical properties/doi:10.1016%2Fj.mseb.2012.10.030/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2013/pagina_da:551/pagina_a:558/intervallo_pagine:551–558/volume:178

Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier

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https://doi.org/10.1016/j.mseb.2012.10.030