Zobrazeno 1 - 10
of 993
pro vyhledávání: '"L. Kubler"'
Publikováno v:
Swarm Intelligence. 2:43-68
Ant clustering algorithms are a robust and flexible tool for clustering data that have produced some promising results. This paper introduces two improvements that can be incorporated into any ant clustering algorithm: kernel function similarity weig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab322b0859a7558d5fb9c00522b303e1
https://doi.org/10.1007/s11721-008-0011-7
https://doi.org/10.1007/s11721-008-0011-7
Publikováno v:
Journal of Physics D: Applied Physics. 40:6225-6241
Using complementary surface analysis techniques, we study the Ge growth on distinct SiC(0 0 0 1) reconstructions and elucidate complex mechanisms occurring by thermal activation. Two Si-rich reconstructions, (3 × 3) and , and one C-rich, , are conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eba8a2e89adf1e5aef7252f9c0c73c4
https://doi.org/10.1088/0022-3727/40/20/s08
https://doi.org/10.1088/0022-3727/40/20/s08
Autor:
Jean-Luc Bischoff, M. Diani, L. Kubler, Mickael Derivaz, D. Dentel, Kamel Aït-Mansour, D. Bolmont
Publikováno v:
Journal de Physique IV (Proceedings). 132:17-21
The Ge growth behaviour on the 3x3 Si-rich surface termination of 4H-SiC(0001) has been investigated in this study. After the deposit of one Ge monolayer at room temperature by molecular beam epitaxy, the film is submitted to isochronal annealing cyc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abf9f13edae7a1db870494444e86db6e
https://doi.org/10.1051/jp4:2006132005
https://doi.org/10.1051/jp4:2006132005
Publikováno v:
Applied Surface Science. 241:403-411
Reflection high-energy electron diffraction (RHEED) has been used to determine epitaxy relationships and in-plane orientations between Ge and SiC(0 0 0 1). Three monolayers of Ge have been deposited at 500 °C on a graphitized SiC (6√3 × 6√3)R30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2a5b7690c31054b2dc8b2b5f8afdb19
https://doi.org/10.1016/j.apsusc.2004.07.054
https://doi.org/10.1016/j.apsusc.2004.07.054
Publikováno v:
Journal of Crystal Growth. 275:e2275-e2280
Epitaxial Ge islands on a SiC(0 0 0 1) substrate have been examined by reflection high-energy electron diffraction (RHEED). These islands have been obtained by depositing three monolayers of Ge at 500 °C on a graphitized SiC (6√3×6√3)R30° reco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1294f77033a1a9ad8822ec075a1a75
https://doi.org/10.1016/j.jcrysgro.2004.11.364
https://doi.org/10.1016/j.jcrysgro.2004.11.364
Autor:
Jean-Luc Bischoff, D. Dentel, J.C. Peruchetti, Laurent Simon, A. Galliano, M. Diani, K. Aït-Mansour, L. Kubler
Publikováno v:
Surface Science. 565:57-69
The initial Ge growth stages on a (√3 × √3)R30°-reconstructed SiC(0 0 0 1) surface (√3) have been studied using a complete set of surface techniques such as reflection high energy electron diffraction (RHEED), low energy electron diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eabb860b16c2e64754275673b790d6c
https://doi.org/10.1016/j.susc.2004.07.003
https://doi.org/10.1016/j.susc.2004.07.003
Autor:
D. Dentel, L. Kubler, Jean-Luc Bischoff, A. Barski, K. Aït-Mansour, M. Diani, Pierre Noé, Mickael Derivaz
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 23:428-434
The Ge growth on SiC(0 0 0 1) follows a Stranski–Krastanov mode for Si-rich (3×3) and ( 3 × 3 )R30° reconstructed surfaces. For Ge deposit in particular temperature conditions, a new (4×4) superstructure takes place and the reflection high ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59ca3b1cb484e50781cb32f579b2b045
https://doi.org/10.1016/j.physe.2003.12.139
https://doi.org/10.1016/j.physe.2003.12.139
Publikováno v:
Applied Surface Science. 235:103-113
By using reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) analyses, we show that the well-known Stranski–Krastanov growth mode of Ge/Si(0 0 1) can be modifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f9d0264d8fb40733e037e0dad56727d
https://doi.org/10.1016/j.apsusc.2004.05.150
https://doi.org/10.1016/j.apsusc.2004.05.150
Publikováno v:
Journal of Applied Physics. 95:5447-5450
The Si capping of small Ge dots nucleated on a C-precovered Si(001) surface has been investigated by means of reflection high-energy electron diffraction and atomic force microscopy. The growth at 500 °C of three Ge monolayers on the C-induced c(4×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81443e13e4171cc9960f93d5d5f29b8
https://doi.org/10.1063/1.1703823
https://doi.org/10.1063/1.1703823
Publikováno v:
Surface Science. 546:1-11
With the aim of comparing initial Ge adsorption and desorption modes on different surface terminations of 4H–SiC(0 0 0 1) faces, 3 × 3, √3×√3R30° (R3) and 6√3×6√3R30° (6R3) reconstructions, of decreasing Si surface richness, have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4123c8454331ea7e7dbbd5671357cd4
https://doi.org/10.1016/j.susc.2003.08.054
https://doi.org/10.1016/j.susc.2003.08.054