Zobrazeno 1 - 10
of 39
pro vyhledávání: '"L. Kehias"'
Autor:
A.K. Oki, T. Jenkins, W. Okamura, Tony Quach, D. Sawdai, E. Kaneshiro, P.M. Watson, A. Gutierrez-Aitken, L. Kehias, J. Eldredge, R. Worley, T.R. Block, R. Welch
Publikováno v:
IEEE Journal of Solid-State Circuits. 2:1126-1134
This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier combines the alternative Class-E mode of operation with a harmonic termination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8f807e0d99f23904f748f503fa7916
https://doi.org/10.1109/jssc.2002.801193
https://doi.org/10.1109/jssc.2002.801193
Autor:
Bernd Keller, Yifeng Wu, Sarah L. Keller, L. Kehias, S. P. DenBaars, T. Jenkins, Umesh Mishra, Paul T. Fini
Publikováno v:
IEEE Electron Device Letters. 19:50-53
The use of an AlGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the AlGaN/GaN MODFET structure. It is shown that the room temperature mobility has little degradation with increasing Al mole-fraction up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584fc41cd279c487c84a7a9c3466bc02
https://doi.org/10.1109/55.658600
https://doi.org/10.1109/55.658600
Autor:
James Ibbetson, Kursad Kiziloglu, D. Grider, P. Parikh, Daniel P. Docter, Umesh Mishra, T. Jenkins, D. Widman, J. Pusl, L. Kehias, Minh T.N. Le
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:2202-2207
A record-high power-added efficiency (PAE) is obtained from a GaAs on insulator (GOI) MESFET. Al/sub 2/O/sub 3/ obtained by the wet oxidation of Al/sub 0.98/GaAs in steam is used as the insulating buffer layer. The insulating buffer results in elimin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90a8427e59876d935f2054308cf288ec
https://doi.org/10.1109/22.739197
https://doi.org/10.1109/22.739197
Autor:
L. Kehias, T. Jenkins, W. Okamura, E. Kaneshiro, R. Worley, R. Welch, Tony Quach, Augusto Gutierrez-Aitken, Aaron K. Oki, P. Watson, H.C. Yen
Publikováno v:
IEEE Microwave and Wireless Components Letters. 11:361-363
InP single heterojunction bipolar transistors have previously demonstrated 5-10 dB lower third-order intermodulation products (IM3) compared to GaAs heterojunction bipolar transistors (HBTs) under low voltage (2 V) operation. This paper reports excel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a01285fda7a0b9d6ff53b8ccdfeb86
https://doi.org/10.1109/7260.950761
https://doi.org/10.1109/7260.950761
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
A highly efficient, wideband power amplifier designed in GaN technology and utilizing a non-uniform distributed topology is reported in this paper. Measured results of an NGES fabricated NDPA demonstrate very high efficiency across the multi-octave b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6385ae501f450d73d778c485c68e1edd
https://doi.org/10.1109/mwsym.2007.379976
https://doi.org/10.1109/mwsym.2007.379976
Autor:
T. Jenkins, L. Kehias, Bernd Keller, Minh T.N. Le, Sarah L. Keller, Umesh Mishra, Chanh Nguyen, Yuan Wu, N.X. Nguyen, S. P. DenBaars
Publikováno v:
IEEE Electron Device Letters. 18:438-440
A thin barrier-donor layer of 200 /spl Aring/ was used to increase the active input capacitance and improve the extrinsic current-gain cutoff frequency (f/sub t/) of short-gate-length AlGaN/GaN MODFETs. 0.2-/spl mu/m gate-length devices fabricated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97956d09e02519f3731ad2fd4cfef753
https://doi.org/10.1109/55.622522
https://doi.org/10.1109/55.622522
Publikováno v:
51st Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0a8ea683e2ca5a68e4786ba7eb64a11
https://doi.org/10.1109/drc.1993.1009581
https://doi.org/10.1109/drc.1993.1009581
Autor:
Y. Wu, P. Chavarkar, P. Parikh, R. Neidhard, Marcia Moore, L. Kehias, T. Jenkins, Umesh Mishra
Publikováno v:
Proceedings. IEEE Lester Eastman Conference on High Performance Devices.
AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power, high frequency applications but recently have also garnered interest for low noise receiver applications. In this paper, we discuss the noise fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10b19eda35fcfb63d22e93f83a57f8f6
https://doi.org/10.1109/lechpd.2002.1146782
https://doi.org/10.1109/lechpd.2002.1146782
Publikováno v:
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
Record power density performance of AlGaAs/GaAs microwave power heterojunction bipolar transistors (HBTs) was accomplished through the use of novel design and fabrication techniques. Thermally-stable operation of HBTs up to their electronic limitatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc9c724699154b81de5a0d06fb895e5c
https://doi.org/10.1109/cornel.1993.303072
https://doi.org/10.1109/cornel.1993.303072
Autor:
L. Kehias, James Ibbetson, Minh Le, J. Pusl, T. Jenkins, Primit Parikh, Kursad Kiziloglu, D. Grider, Daniel P. Docter, Umesh Mishra
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).
Record power-added efficiency (PAE) of 89% was obtained at 8 GHz with a gain of 9.6 dB using GaAs on insulator (GOI) MESFETs, which were operated using a 3 V supply. When the voltage was increased to 4 V, the peak PAE was 93% at 210 mW/mm with 9.2 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6778676e2f8d8a4176a51b0b6bf6e996
https://doi.org/10.1109/gaas.1998.722695
https://doi.org/10.1109/gaas.1998.722695