Zobrazeno 1 - 10
of 46
pro vyhledávání: '"L. Kappius"'
Publikováno v:
Microelectronic Engineering. 60:191-196
We report on the growth and structural characterisation of a novel single crystalline, epitaxial Ge-CoSi2- Si(111) heterostructure suitable for the fabrication of a vertical metal-semiconductor-metal photodetector for the wavelength of 1.55 µm. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c88f1f78847bb12fc52d0c34db18d55
https://doi.org/10.1016/s0167-9317(01)00594-9
https://doi.org/10.1016/s0167-9317(01)00594-9
Autor:
Christophe Detavernier, Q. T. Zhao, St. Lenk, Patrick Kluth, L. Kappius, Siegfried Mantl, H. L. Bay, J Xu
Publikováno v:
Microelectronic Engineering. 55:177-182
We have developed a self-assembly method for patterning thin CoSi 2 layers on Si(100) during their formation in a solid state reaction. This technique is based on anisotropic diffusion in a local stress field during rapid thermal processing. The stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cda7fe140b5dc298ae715aaf3b94c05
https://doi.org/10.1016/s0167-9317(00)00445-7
https://doi.org/10.1016/s0167-9317(00)00445-7
Publikováno v:
Microelectronic Engineering. 55:151-156
We investigated the solid state reaction of 30-nm and 100-nm-thick silicide layers on single-crystalline silicon in the temperature range between 650 and 800°C using transmission electron microscopy and atomic force microscopy. Sheet resistance meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e061a5a395188d6cabce1f04b1226c8b
https://doi.org/10.1016/s0167-9317(00)00441-x
https://doi.org/10.1016/s0167-9317(00)00441-x
Publikováno v:
Materials Science in Semiconductor Processing. 3:399-403
We have fabricated ultrafast Si metal–semiconductor–metal photodetectors and connected them to optical waveguides. The photodetectors are fabricated in a vertical structure consisting of a top metallization (M1), epitaxial silicon, epitaxial meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::538920629fdf625019fd0c88e47c2e84
https://doi.org/10.1016/s1369-8001(00)00063-9
https://doi.org/10.1016/s1369-8001(00)00063-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1004-1009
Epitaxial CoSi2 layers were grown on Si(1 0 0) using molecular beam allotaxy. Boron ion implantations and rapid thermal oxidation (RTO) were performed. During oxidation, SiO2 formed on the surface of the CoSi2 layers, and the silicides was pushed int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ad06cbffadc7ae048d2fd8d56e4c87
https://doi.org/10.1016/s0168-583x(99)01039-3
https://doi.org/10.1016/s0168-583x(99)01039-3
Autor:
S. Mantl, O. H. Seeck, C. Dieker, Werner Press, J.-P. Schlomka, J. Stettner, L. Kappius, Metin Tolan, I. D. Kaendler
Publikováno v:
Journal of applied physics 87, 133 (2000).
A series of buried CoSi2 layers prepared by a modified molecular beam epitaxy process (allotaxy) and a subsequent wet-oxidation process was investigated by x-ray scattering. The oxidation time which determines the depth in which the CoSi2 layers are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ecfcccf79102fd4ba9ab1be2e2f6822
https://doi.org/10.1063/1.371834
https://doi.org/10.1063/1.371834
Publikováno v:
Microelectronic Engineering. 50:133-138
A novel nanometer patterning technique was developed to pattern epitaxial CoSi2 layers and to fabricate Schottky-tunneling MOSFETs. The nanopatterning method is based on the local oxidation of silicide layers. A feature size as small as 50 nm was obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb98fd8a6c460b560749577faaf8e3b
https://doi.org/10.1016/s0167-9317(99)00273-7
https://doi.org/10.1016/s0167-9317(99)00273-7
Publikováno v:
Solid-State Electronics. 43:1091-1094
Nanometer patterning of single crystalline CoSi2 layers on Si(100) by local oxidation was studied. Epitaxial CoSi2 layers with thicknesses around 20 nm were grown on Si(100) by molecular beam allotaxy. A nitride layer was deposited on the surface of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::005a61453aebb44bf9618ffabfbacf52
https://doi.org/10.1016/s0038-1101(99)00030-1
https://doi.org/10.1016/s0038-1101(99)00030-1
Publikováno v:
Thin Solid Films. 321:251-255
In this paper we present recent investigations on the growth of buried single crystalline CoSi2 layers in Si(100) by molecular beam allotaxy. By this growth method the layer formation takes place during a rapid high temperature anneal of silicide pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ffbe19e06c05eaf7482fa8bc0762eb
https://doi.org/10.1016/s0040-6090(98)00482-9
https://doi.org/10.1016/s0040-6090(98)00482-9
Publikováno v:
Thin Solid Films. 318:163-167
We have investigated the thermal oxidation of epitaxial CoSi 2 on Si(111). The epitaxial layers were grown by molecular beam allotaxy with thicknesses ranging from 30 to 40 nm. Similar to the well established technology for local oxidation of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab8108ed5b3c46cd891d6a18b5b51737
https://doi.org/10.1016/s0040-6090(97)01158-9
https://doi.org/10.1016/s0040-6090(97)01158-9