Zobrazeno 1 - 10
of 88
pro vyhledávání: '"L. K. Orlov"'
Autor:
L. K. Orlov, M. L. Orlov
Publikováno v:
Semiconductors. 55:319-327
The anisotropy of the conductivity and the shape of the I–V characteristics for a two-dimensional quantum superlattice with the nonharmonic electron dispersion law are investigated for different directions of the current and field applied to the st
Publikováno v:
Physics of the Solid State. 61:1263-1271
The crystal structure features and light-emitting properties of 3C–SiC island films grown at decreased temperatures on the Si(100) surface by vacuum chemical epitaxy with the use of hydrogen-containing compounds are studied. The nucleation characte
Publikováno v:
Semiconductors. 53:979-988
Data on the dependence of the growth rate of Si layers deposited onto Ge(111) by the hydride method on their thickness at the initial heteroepitaxy stage are reported. The effect of a Ge substrate within ten grown silicon single layers on the Si-film
Publikováno v:
Semiconductors. 52:1129-1136
The electric-field behavior of resonance features of the photoelectric characteristics of InAs/GaAs heterostructures is investigated. The emission of carriers excited by light from InAs quantum dots into the GaAs matrix is discussed. It is show
Publikováno v:
Technical Physics. 62:449-459
The steady-state kinetics of growth of Si1 – xGex layers in one version of hybrid molecular beam epitaxy with a molecular germane source and a sublimating silicon bar has been studied. It has been demonstrated that the processes of capture of hydri
Autor:
S. V. Ivin, L. K. Orlov
Publikováno v:
Russian Journal of Physical Chemistry B. 10:219-230
Kinetic theory is used to treat the characteristics of the decomposition of the disilane molecule into two non-identical radicals in a wide range of growth temperatures and at low gas pressure in the reactor. The conditions for determining surface co
Autor:
L. K. Orlov, S. V. Ivin
Publikováno v:
Russian Journal of General Chemistry. 85:2686-2698
Specific features of the pyrolysis of hydride molecules on the surface of a Si1–x Ge x film under conditions of epitaxial film deposition of a mixture of silicon and germanium hydrides have been studied. Temperature dependences of the kinetic coeff
Autor:
V. I. Vdovin, V. F. Petrova, Yu. N. Drozdov, N. L. Ivina, M. L. Orlov, L. K. Orlov, E. A. Shteinman
Publikováno v:
Journal of Structural Chemistry. 55:1180-1189
In the work the properties of grain-oriented layers of the cubic phase of silicon carbide and SiGeC nanoscale basic region formed under them at the inner boundary of the 3C-SiC/SiGeC/Si(100) heterojunction are discussed. The structures are obtained i
Publikováno v:
Semiconductors. 48:942-953
The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si1 − xGex heterostructures with an electron conduction channel in an elastically strained nanoscale silicon layer are investigated. It is demonstrated that
Autor:
L. K. Orlov, N. L. Ivina
Publikováno v:
Semiconductors. 48:828-837
Using the results of technological experiments based on a two-component kinetic model (SiH4 → SiH3 + SiH), the range of characteristic decomposition frequencies of silicon-hydride molecule radicals adsorbed by the layer growth surface in the temper