Zobrazeno 1 - 1
of 1
pro vyhledávání: '"L. K. Knoch"'
Autor:
J. K. Watanabe, J. W. Steele, Jim Christiansen, K. M. Klein, L. K. Knoch, G. H. Loechelt, Gordon Tam
Publikováno v:
Journal of Applied Physics. 74:5520-5526
Boron concentration profiles in rapid thermally annealed Si and strained Si1−xGex in situ doped, epitaxial layers were measured using secondary‐ion‐mass spectroscopy. Comparison of the Si1−xGex samples to the Si samples after rapid thermal an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::793ec9cac94dfcc52c74ec9b36a6bd47
https://doi.org/10.1063/1.354209
https://doi.org/10.1063/1.354209
