Zobrazeno 1 - 7
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pro vyhledávání: '"L. K. J. Vandamme"'
Autor:
L. K. J. Vandamme
Publikováno v:
Active and Passive Electronic Components, Vol 4, Iss 3-4, Pp 171-177 (1977)
Externí odkaz:
https://doaj.org/article/7eb6d9e2d3aa4e38931b1334f1c3ebf5
Publikováno v:
Fluctuation and Noise Letters. 10:417-418
Publikováno v:
AIP Conference Proceedings.
Some experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are given for the two schools of thought about the origin of 1/f noise. The consequences of models based on number or mobility fluctuations on the device geometry and o
Publikováno v:
AIP Conference Proceedings.
The current fluctuations have been investigated in different GaAs/Al0.4Ga0.6As superlattice structures. New expressions are presented for the observed 1/f and white noise. These expressions are compared with experimental results. A fair agreement has
Publikováno v:
Fluctuation and Noise Letters, 4(1), 239-239. World Scientific
Erratum
Autor:
L. K. J. Vandamme
Publikováno v:
Journal of Applied Physics, 45(10), 4563-4565. American Institute of Physics
An experimental investigation has been carried out to confirm that contact noise of two crossed semiconductor bars with native oxide films in between can be understood as a volume 1/f noise. Noise and contact resistance have been measured as function
Autor:
Leon P. J. Kamp, L. K. J. Vandamme
Publikováno v:
Journal of Applied Physics, 50(1), 340-342. American Institute of Physics
Analytic functions are derived for the spectral noise voltage density between two circular sensorelectrodes on a two-dimensional isotropic conductor, placed either transversely or longitudinally to a homogeneous electric field. The sensorelectrodes a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cff09f70d6bb768a30eba55152e3932
https://research.tue.nl/nl/publications/0efe3206-4869-453b-aa75-438a0d029654
https://research.tue.nl/nl/publications/0efe3206-4869-453b-aa75-438a0d029654