Zobrazeno 1 - 10 of 1 255 pro vyhledávání: '"L. K. J. Vandamme"'
1
Akademický článek
Criteria of Low-Noise Thick-Film Resistors
Autor: L. K. J. Vandamme
Publikováno v: Active and Passive Electronic Components, Vol 4, Iss 3-4, Pp 171-177 (1977)
Externí odkaz: https://doaj.org/article/7eb6d9e2d3aa4e38931b1334f1c3ebf5
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2
Akademický článek
CHARACTERIZATION OF CONTACT INTERFACE, FILM SHEET RESISTANCE AND 1/f NOISE WITH CIRCULAR CONTACTS.
Autor: VANDAMME, L. K. J.1 L.K.J.Vandamme@tue.nl, Kish, L. B.
Publikováno v: Fluctuation & Noise Letters. Dec2011, Vol. 10 Issue 4, p467-484. 18p. 1 Diagram, 1 Chart, 2 Graphs.
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4
1/f noise in MOS transistors due to number or mobility fluctuations
Autor: L. K. J. Vandamme, Xiaosong Li, D. Rigaud
Publikováno v: AIP Conference Proceedings.
Some experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are given for the two schools of thought about the origin of 1/f noise. The consequences of models based on number or mobility fluctuations on the device geometry and o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9b2b4e06390c6c392f8202936292691b
https://doi.org/10.1063/1.44663
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5
1/f noise and thermal noise of a GaAs/Al0.4Ga0.6As superlattice
Autor: L. K. J. Vandamme, S. Kibeya, R. Alabedra, B. Orsal
Publikováno v: AIP Conference Proceedings.
The current fluctuations have been investigated in different GaAs/Al0.4Ga0.6As superlattice structures. New expressions are presented for the observed 1/f and white noise. These expressions are compared with experimental results. A fair agreement has
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0601c05bbf30dcbbc0beaa2a218bc76f
https://doi.org/10.1063/1.44560
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7
Akademický článek
Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System.
Autor: Koo, Ryun‐Han1 (AUTHOR), Shin, Wonjun1 (AUTHOR), Kim, Seungwhan1 (AUTHOR), Im, Jiseong1 (AUTHOR), Park, Sung‐Ho1 (AUTHOR), Ko, Jong Hyun1 (AUTHOR), Kwon, Dongseok1 (AUTHOR), Kim, Jae‐Joon1 (AUTHOR), Kwon, Daewoong2 (AUTHOR) dw79kwon@hanyang.ac.kr, Lee, Jong‐Ho1,3 (AUTHOR) jhl@snu.ac.kr
Publikováno v: Advanced Science. 2/2/2024, Vol. 11 Issue 5, p1-13. 13p.
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8
Akademický článek
Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si3N4 Memristors Investigated by Low-Frequency Noise Spectroscopy.
Autor: Yakimov, Arkady V.1 (AUTHOR) yakimov@rf.unn.ru, Klyuev, Alexey V.1 (AUTHOR), Filatov, Dmitry O.1 (AUTHOR), Gorshkov, Oleg N.1 (AUTHOR), Antonov, Dmitry A.1 (AUTHOR), Mikhaylov, Alexey N.1 (AUTHOR), Kochergin, Viktor S.1 (AUTHOR), Vasileiadis, Nikolaos2 (AUTHOR), Dimitrakis, Panagiotis2 (AUTHOR) p.dimitrakis@inn.demokritos.gr
Publikováno v: Fluctuation & Noise Letters. Feb2024, Vol. 23 Issue 1, p1-19. 19p.
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9
Akademický článek
COMPARISON OF 1/f NOISE IN JFETs AND MOSFETs WITH SEVERAL FIGURES OF MERIT.
Autor: LEVINZON, FELIX A.1 felix.levinzon1@meggitt.com, VANDAMME, L. K. J.2 L.K.J.Vandamme@tue.nl, Kish, L. B.
Publikováno v: Fluctuation & Noise Letters. Dec2011, Vol. 10 Issue 4, p447-465. 19p. 4 Diagrams, 4 Charts, 6 Graphs.
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10
Akademický článek
1/f noise in pentacene and poly-thienylene vinylene thin film transistors.
Autor: Vandamme, L. K. J., Feyaerts, R., Trefa´n, Gy., Detcheverry, C.
Publikováno v: Journal of Applied Physics; 1/15/2002, Vol. 91 Issue 2, p719, 5p, 1 Diagram, 1 Chart, 7 Graphs
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