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pro vyhledávání: '"L. K. Howard"'
Magneto-transport at low temperature has been employed to study a series of p-type In0.18Ga0.82As/GaAs quantum wells with carrier concentrations in the range (1.5-4.3)*1011 cm-2. Tilting the field from the growth direction does not change the relativ
Externí odkaz:
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https://ora.ox.ac.uk/objects/uuid:d962c663-0f36-499e-a6dc-ea89947e4d5d
https://ora.ox.ac.uk/objects/uuid:d962c663-0f36-499e-a6dc-ea89947e4d5d
Publikováno v:
Journal of Applied Physics. 73:7715-7719
The effects of silicon and beryllium at doping levels of up to 1019 cm−3 on the interdiffusion of GaAs/AlxGa1−xAs and InxGa1−xAs/GaAs quantum wells after annealing have been studied using photoluminescence. It was found that for beryllium conce
Publikováno v:
Journal of Applied Physics. 73:3782-3786
Interdiffusion in InGaAs/GaAs quantum wells has been studied using photoluminescence to follow the development of the diffusion with time in a single sample. Two distinct regimes are seen; a fast initial diffusion and a second steady‐state diffusio
Autor:
D. Lancefield, R. H. Dixon, Peter Goodhew, P. Kidd, M. T. Emeny, Matthew P. Halsall, Chris Jeynes, Kevin P. Homewood, J. D. Lambkin, David J. Dunstan, Alfred R. Adams, L. K. Howard, B.J. Sealy, V. A. Wilkinson
Publikováno v:
Journal of Crystal Growth. 126:589-600
We report the growth of 3 μm thick relaxed layers of In x Ga 1− x As on GaAs substrates, with x from 0.1 to 1, and give some results of compositional, optical, structural and electrical characterisation. Compositions were determined by several tec
Publikováno v:
Physical Review B. 46:15290-15301
In this paper we present an investigation of the optical transitions in strained ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As-GaAs single and multiple quantum wells, for indium content x\ensuremath{\simeq}10% and
Autor:
A K M M Haque, L K Howard
Publikováno v:
Semiconductor Science and Technology. 7:1316-1324
Epitaxial films of CaF2 have been grown on Si(100) and Si(111). The substrate temperatures required for epitaxy, determined by Rutherford backscattering of 340 keV protons, are compared with those previously reported, as are the results of examinatio
Publikováno v:
Journal of Crystal Growth. 125:281-290
Single surface layers of In 0.2 Ga 0.8 As ranging from 10 nm to 3 μm in thickness have been grown by molecular beam epitaxy (MBE) on GaAs at two growth temperatures, 400°C and 519°C. The residual strain of each layer has been obtained from double
Publikováno v:
Physical Review B. 45:3906-3909
Quantum-well ground and excited states are observed using wavelength-modulated reflectivity in ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/${\mathrm{Al}}_{\mathit{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mat
Publikováno v:
Journal of Electronic Materials. 20:509-516
InxGa1-xAs quantum wells grown pseudomorphically in GaAs and AlGaAs with values ofx up to 0.25 have been studied by photoluminescence under high hydrostatic pressure. We concentrate here on the pressure range where the emissions quench and take on th
Publikováno v:
Physical Review B. 43:14124-14133
0p-type 90-A Ino, 8Gao 82AS/GaAs quantum wells with carrier concentrations in the range p, =(1.5 — 4. 3) X 10" cm have been studied by magneto-optics. Cyclotron resonance measures the effective mass of the ~MJ ~ = —holes as =0.16 for in-plane mot