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Publikováno v:
2013 15th European Conference on Power Electronics and Applications (EPE).
This paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b7333c93460332d2639020b74424373
https://doi.org/10.1109/epe.2013.6634425
https://doi.org/10.1109/epe.2013.6634425
