Zobrazeno 1 - 10
of 321
pro vyhledávání: '"L. J. Sham"'
Autor:
L. J. Sham
Publikováno v:
MRS Bulletin. 45:669-674
Fundamental materials properties are determined by electrons under the potential energy from the nuclei, the electron mass, and their mutual repulsion. The variable from material to material is the ion potential. The logical procedure of computing el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b757690bff871176059d940b3fe51eda
https://doi.org/10.1557/mrs.2020.192
https://doi.org/10.1557/mrs.2020.192
Autor:
Aaron M. Ross, Daniel Gammon, Duncan G. Steel, Allan S. Bracker, Michael K. Yakes, L. J. Sham
Publikováno v:
Physical Review B. 102
We report on the direct measurement of the electron spin splitting and the accompanying nuclear Overhauser field, and thus the underlying nuclear spin polarization (NSP) and fluctuation bandwidth, in a single InAs quantum dot under resonant excitatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e23a111ab33ffecfb303a4039407bc92
https://doi.org/10.1103/physrevb.102.235425
https://doi.org/10.1103/physrevb.102.235425
Autor:
L. J. Sham
Publikováno v:
Sham, LJ. (2016). Walter Kohn (1923-2016).. Nature, 534(7605), 38. doi: 10.1038/534038a. UC San Diego: Retrieved from: http://www.escholarship.org/uc/item/6830j304
Nature, vol 534, iss 7605
Nature, vol 534, iss 7605
COMMENT OBITUARY Walter Kohn the properties of a system, including the distribution of electron density. The density functional theory swapped the cause and effect roles between the energy landscape and the electron-density distribution. This paved a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b06f0b3b8a21477888bad044c2fec60
http://www.escholarship.org/uc/item/6830j304
http://www.escholarship.org/uc/item/6830j304
Autor:
Igor Žutić, Hanan Dery, L. J. Sham, Jing Shi, Roland Kawakami, Walid Amamou, Tiancong Zhu, Zhisheng Lin, Hua Wen, Ilya Krivorotov
Publikováno v:
Physical Review Applied, vol 5, iss 4
Wen, H; Dery, H; Amamou, W; Zhu, T; Lin, Z; Shi, J; et al.(2016). Experimental Demonstration of xor Operation in Graphene Magnetologic Gates at Room Temperature. Physical Review Applied, 5(4), 044003. doi: 10.1103/PhysRevApplied.5.044003. UC Irvine: Retrieved from: http://www.escholarship.org/uc/item/28b2d9sh
Wen, H; Dery, H; Amamou, W; Zhu, T; Lin, Z; Shi, J; et al.(2016). Experimental Demonstration of xor Operation in Graphene Magnetologic Gates at Room Temperature. Physical Review Applied, 5(4), 044003. doi: 10.1103/PhysRevApplied.5.044003. UC Irvine: Retrieved from: http://www.escholarship.org/uc/item/28b2d9sh
We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin injection and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea310c2f2942128778c69468bf020fe4
https://escholarship.org/uc/item/28b2d9sh
https://escholarship.org/uc/item/28b2d9sh
Autor:
Hanan Dery, Hui Wu, Igor Zutic, Roland Kawakami, Berkehan Ciftcioglu, Ilya Krivorotov, L. J. Sham, Jing Shi, Michael C. Huang, Yang Song
Publikováno v:
IEEE Transactions on Electron Devices. 59:259-262
We present a seamless integration of spin-based memory and logic circuits. The building blocks are magnetologic gates based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f3550a5d497cbf335e782d1fbf5691
https://doi.org/10.1109/ted.2011.2173498
https://doi.org/10.1109/ted.2011.2173498
Publikováno v:
Solid State Communications. 149:1479-1484
We review the investigation of a single quantum dot driven by a strong optical field. By coherent pump-probe spectroscopy, we demonstrate the Autler–Townes splitting and Mollow absorption spectrum in a single neutral quantum dot. Furthermore, we al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74bedaca2e46e1463fdb36652a813aba
https://doi.org/10.1016/j.ssc.2009.04.042
https://doi.org/10.1016/j.ssc.2009.04.042
Autor:
L. J. Sham
Publikováno v:
International Journal of Quantum Chemistry. 28:491-495
A series of recent work done in collaboration with Schluter and Lannoo is reviewed here. Exact expressions of the density functionals of the exchange-correlation energy and potential are given in perturbation series of the Coulomb interaction. For in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::749e018e1173930c3431ca3c08da2718
https://doi.org/10.1002/qua.560280845
https://doi.org/10.1002/qua.560280845
Publikováno v:
International Journal of Modern Physics B. 22:27-32
The electron spin decoherence by nuclear spins in semiconductor quantum dots is caused by quantum entanglement between the electron and the nuclei. The many-body dynamics problem of the interacting nuclear spins can be solved with the pair-correlatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f54dc8da832148964e85a8961e98875
https://doi.org/10.1142/s0217979208046013
https://doi.org/10.1142/s0217979208046013
Autor:
Allan S. Bracker, Xiaodong Xu, Bo Sun, L. J. Sham, Daniel Gammon, Duncan G. Steel, Paul R. Berman
Publikováno v:
Science. 317:929-932
Quantum dots are typically formed from large groupings of atoms and thus may be expected to have appreciable many-body behavior under intense optical excitation. Nonetheless, they are known to exhibit discrete energy levels due to quantum confinement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7232b59c685f4ce0e1d650adc2f506b7
https://doi.org/10.1126/science.1142979
https://doi.org/10.1126/science.1142979
Autor:
Lujiang Yan, Yu-Hwa Lo, L. J. Sham, Yu-Hsin Liu, David J. Hall, Alex Ce Zhang, Iftikhar Ahmad Niaz, Yuchun Zhou
Publikováno v:
Applied Physics Letters, vol 107, iss 5
Liu, YH; Yan, L; Zhang, AC; Hall, D; Niaz, IA; Zhou, Y; et al.(2015). Cycling excitation process: An ultra efficient and quiet signal amplification mechanism in semiconductor. Applied Physics Letters, 107(5). doi: 10.1063/1.4928389. UC San Diego: Retrieved from: http://www.escholarship.org/uc/item/76r2r1r7
Liu, YH; Yan, L; Zhang, AC; Hall, D; Niaz, IA; Zhou, Y; et al.(2015). Cycling excitation process: An ultra efficient and quiet signal amplification mechanism in semiconductor. Applied Physics Letters, 107(5). doi: 10.1063/1.4928389. UC San Diego: Retrieved from: http://www.escholarship.org/uc/item/76r2r1r7
© 2015 AIP Publishing LLC. Signal amplification, performed by transistor amplifiers with its merit rated by the efficiency and noise characteristics, is ubiquitous in all electronic systems. Because of transistor thermal noise, an intrinsic signal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c91d4dd1159e001b312b9dcbb6d5c05
https://escholarship.org/uc/item/76r2r1r7
https://escholarship.org/uc/item/76r2r1r7