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pro vyhledávání: '"L. J. Gerritsen"'
Autor:
J. D. van Otterloo, L. J. Gerritsen
Publikováno v:
Journal of Applied Physics. 49:723-729
Schottky‐barrier diodes have been realized by cleaving n‐type Si in ultrahigh vacuum (UHV) in a stream of evaporating metal atoms. The properties of these Al, Mg, and Fe diodes are studied by means of standard I‐V, C−2‐V, and photoemission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374541eca93db09326263a74b31d293a
https://doi.org/10.1063/1.324650
https://doi.org/10.1063/1.324650
