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pro vyhledávání: '"L. J. Bissell"'
Autor:
S. Saha, A. Rice, A. Ghosh, S. M. N. Hasan, W. You, T. Ma, A. Hunter, L. J. Bissell, R. Bedford, M. Crawford, S. Arafin
Publikováno v:
AIP Advances, Vol 11, Iss 5, Pp 055008-055008-7 (2021)
Hexagonal boron nitride (h-BN) is considered as one of the most promising materials for next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN epitaxially grown using a carbon-free precursor on c-plane sapphire with
Externí odkaz:
https://doaj.org/article/5fcf0cb80a994ee9bbe192c36f66bc91
