Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. I. Postnova"'
Publikováno v:
Наука и техника, Vol 20, Iss 6, Pp 482-486 (2021)
Alloys of lead and tin telluride (PbxSn1–xTe) are materials with good thermoelectric properties, as well as semiconductors that can be used as long-wave infrared detectors. Polycrystalline telluride of PbxSn1–xTe (0.05 £ x £ 0.80) alloys has be
Externí odkaz:
https://doaj.org/article/9a0c3864b0cd427aa220ad83d6300dab
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 6, Pp 100-102 (2019)
ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the
Externí odkaz:
https://doaj.org/article/b7105b122d774bccac0f4a1f59682ecd
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:442-445
ZnSe1 − xSx (1 ≥ x ≥ 0) crystals are grown from the vapor of binary components in a closed horizontal system. The ZnSe1 − xSx crystals doped with chromium and cobalt are prepared by post-growth diffusion. Their absorption spectra are studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fbb163305a4946f9abe1781e7355223
https://doi.org/10.1134/s1027451012050059
https://doi.org/10.1134/s1027451012050059
Publikováno v:
Crystallography Reports. 54:1245-1248
Partially faceted ZnSe1 − xSx solid solution crystals have been grown from a vapor phase in a closed stationary horizontal system. The growth has been performed in cylindrical quartz ampoules—∼10 mm in diameter and evacuated to a residual press
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::960345df483b3a7928fe5253d8eb4009
https://doi.org/10.1134/s1063774509070189
https://doi.org/10.1134/s1063774509070189
Publikováno v:
Inorganic Materials. 50:10-12
We have developed a procedure for the crystal growth of ZnSe1 − xSx solid solutions from the vapor phase at pmin, which makes it possible to reproducibly grow partially faceted, large-block crystals at temperatures below the wurtzite-sphalerite pha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c51cab231f5baf52e950d2fb176a4fb
https://doi.org/10.1134/s0020168514010191
https://doi.org/10.1134/s0020168514010191
Publikováno v:
Thin Solid Films. 348:141-144
Epitaxial PbS films were grown by molecular-beam epitaxy (MBE) on the surface of porous silicon (PS) formed on the silicon substrate of (111) orientation. The uniform PS layers 5 μm thick were produced by electrochemical anodic treatment of n + -sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dac8ec43e74668685b6ebd6f84d46ce4
https://doi.org/10.1016/s0040-6090(99)00052-8
https://doi.org/10.1016/s0040-6090(99)00052-8