Zobrazeno 1 - 7
of 7
pro vyhledávání: '"L. I. Khirunenko"'
Publikováno v:
Journal of Applied Physics. 132:135703
Silicon doped with boron is the most widely used material in modern microelectronic devices based on p-Si. Therefore, it is important to thoroughly understand boron’s role in the processes of defect-impurity interaction in Si both on growing the ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e26a70b02fdbe2c06884e7f5ec599a0
https://doi.org/10.1063/5.0114809
https://doi.org/10.1063/5.0114809
Autor:
N. A. Matchanov, M. S. Saidov, D. Saidov, L. I. Khirunenko, S. L. Lutpullaev, M. U. Hajiev, A. Yusupov, I. G. Atabaev
Publikováno v:
Physics of the Solid State. 49:1658-1660
The concentration of divacancies formed in Si1 − xGex solid solutions under irradiation by fast and slow neutrons is investigated as a function of the germanium content. It is demonstrated that the role of annihilation of primary radiation-induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25b8abebf4f4a086118cc4aabed8f5f5
https://doi.org/10.1134/s1063783407090090
https://doi.org/10.1134/s1063783407090090
Publikováno v:
Semiconductors. 32:120-122
An investigation of the influence of germanium doping (⩽1 at. %) on the formation efficiency of the main secondary radiation defects in silicon under low-temperature (T⩽90 K) electron irradiation has been carried out. The significant decrease of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4fdeae0a5f400db8cde982c96d6a9ba
https://doi.org/10.1134/1.1187329
https://doi.org/10.1134/1.1187329
Publikováno v:
Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
The doping of CZ silicon with the isovalent impurity germanium is known to lead to a decrease in the rate of thermal donor (TD) formation during heat treatment at 450–650 °C [1,2]. This effect is still not completely understood. Some authors sugge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9818d0e83c72800912a5dacd30bb8659
https://doi.org/10.1007/978-94-009-0355-5_27
https://doi.org/10.1007/978-94-009-0355-5_27
Publikováno v:
Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
The VO- or A-centre is known to be the main oxygen-related radiation defect CZ silicon and germanium. Its structure and annealing kinetics have been extensively investigated previously [1-7].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d5a08e1291cbb236f69ff8b0700491
https://doi.org/10.1007/978-94-009-0355-5_28
https://doi.org/10.1007/978-94-009-0355-5_28
Publikováno v:
physica status solidi (b). 116:K31-K34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88a84c188cab241e2bd63729cde039e
https://doi.org/10.1002/pssb.2221160149
https://doi.org/10.1002/pssb.2221160149
Publikováno v:
Journal of Applied Spectroscopy. 50:310-313
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f060f5e4662f916a570503a570b3a8
https://doi.org/10.1007/bf00663426
https://doi.org/10.1007/bf00663426