Zobrazeno 1 - 7
of 7
pro vyhledávání: '"L. I. Guzilova"'
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 15, Iss 3, Pp 546-549 (2015)
The results of microhardness measurements of β-Ga2O3 single crystals for (001) crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values were determined by the
Externí odkaz:
https://doaj.org/article/67f217b6cab8470a9654997d221589eb
Publikováno v:
Technical Physics. 66:1186-1193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb7a366c635e3a148e240db29ca93b08
https://doi.org/10.1134/s1063784221090048
https://doi.org/10.1134/s1063784221090048
Autor:
L. I. Guzilova, A. S. Grashchenko, P. N. Butenko, A. V. Chikiryaka, A. I. Pechnikov, V. I. Nikolaev
Publikováno v:
Technical Physics Letters. 47:709-713
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a343d6c0123a8ecdcb10ab1fdfc0a8c9
https://doi.org/10.1134/s106378502107021x
https://doi.org/10.1134/s106378502107021x
Publikováno v:
Technical Physics. 65:128-132
The elastic and microplastic properties of large quasi-bulk GaN samples of two types, grown by hydride vapor-phase epitaxy, have been acoustically investigated. Samples of the first type are polycrystals textured along a crystallographic direction, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8af2d34655b6a774988482f1c54b15f
https://doi.org/10.1134/s1063784220010089
https://doi.org/10.1134/s1063784220010089
Publikováno v:
Technical Physics Letters. 45:1114-1117
The microhardness and crack resistance of two main gallium oxide polytypes: metastable α-Ga2O3 with a corundum structure and β-Ga2O3 (high-temperature phase) with a monoclinic crystal structure, have been studied using a Vickers method of diamond p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66215e7f362700776c6cda080181d5e
https://doi.org/10.1134/s1063785019110117
https://doi.org/10.1134/s1063785019110117
Autor:
V. V. Nikolaev, A. V. Chikiryaka, Ivan Shchemerov, A. I. Pechnikov, Sergey Stepanov, A. Ya. Polyakov, L. I. Guzilova, V. I. Nikolaev, M. P. Shcheglov, A. A. Vasilev
Publikováno v:
Technical Physics Letters. 46:228-230
Epitaxial layers of a new wide-band semiconductor (α-Ga2O3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31f253530f386abe855cb3edb3a92b0
https://doi.org/10.1134/s106378502003013x
https://doi.org/10.1134/s106378502003013x
Publikováno v:
Technical Physics Letters. 44:181-183
The reactive stresses induced in Ni49Fe18Ga27Co6-alloy single crystals during martensitic transformations with a limited possibility of shape-memory-strain recovery have been experimentally studied. The data on these crystals are compared with the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ea71d11ee001b558485ecb4197f2dd7
https://doi.org/10.1134/s1063785018030045
https://doi.org/10.1134/s1063785018030045