Zobrazeno 1 - 10
of 59
pro vyhledávání: '"L. I. Gonchar"'
Publikováno v:
European Proceedings of Social and Behavioural Sciences.
Based on the data of the sociological survey, the consequences of the corona virus epidemic on various aspects of the studying process in the university educational system from the point of view of the student community are identified and analyzed. I
Publikováno v:
Technical Physics Letters. 32:38-41
Charge carrier density in bismuth-doped tellurium has been studied as a function of the dopant concentration in order to determine the boundary of the second phase formation in the Bi-Te system. All bismuthdoped tellurium samples, in contrast to the
Publikováno v:
Physics of the Solid State. 45:1683-1687
This paper reports on the results of investigations into the dislocation mobility in n-Si single crystals (N d =5×1024 m−3) upon simultaneous exposure to electric (j=3×105 A/m2) and magnetic (B≤1 T) fields. It is found that the introduction of
Publikováno v:
Physics of the Solid State. 43:1252-1256
The acoustic emission method is employed for an experimental investigation of the effect of a magnetic field on the mobility of edge dislocations in a plastically deformed n-silicon sample carrying a current. It is found that the preliminary treatmen
Publikováno v:
Journal of Experimental and Theoretical Physics. 93:117-120
The magnetoplastic effect in dislocation silicon is discovered. It is shown that in the presence of tensile stresses (up to 20 MPa), the mechanically activated path of surface dislocation half-loops is limited mainly by the dynamics of defects in var
Publikováno v:
Physics of the Solid State. 42:1861-1864
The influence of weak (
Autor:
B. M. Kostishko, L. I. Gonchar
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 66:382-386
The change produced in the photoluminescence (PL) of n-type porous silicon (por-Si) by irradiation with ultraviolet laser radiation in the presence of an external electric field has been investigated. A field effect, consisting of a large change in t
Publikováno v:
Technical Physics Letters. 24:81-82
An analysis is made of the temperature dependence of the electrical conductivity of undoped nonstoichiometric indium oxide films. Activation energies are obtained for the formation of oxygen vacancies and for the mobility of quasifree carriers.
Publikováno v:
Scientific Journal Ukrainian Journal of Forest & Wood Science. 2023, Vol. 14 Issue 2, p83-95. 13p.
Autor:
MYKHALEVSKIY, D. V.1 mykhalevskiy5668@murdoch.in
Publikováno v:
Journal of the Balkan Tribological Association. 2021, Vol. 27 Issue 4, p510-531. 22p.