Zobrazeno 1 - 10
of 33
pro vyhledávání: '"L. I. Burov"'
Publikováno v:
Optik. 158:118-126
Within the scope of the earlier proposed approach to the description of polarization dependences in VCSEL based on analysis of the experimental and theoretical data, an explicit expression for the function describing the relationship between the ampl
Autor:
L. I. Burov, P.M. Lobatsevich, Jihad S. Addasi, A. S. Gorbatsevich, M. Jadan, Moayad Husein Flaifel
Publikováno v:
Results in Physics, Vol 14, Iss, Pp-(2019)
This work is devoted to a theoretical study that addresses the influence of the parameters of original laser system on the dynamics of formation of polarized radiation in VCSEL with his institution of symmetrical triangular pulses. The model is based
Publikováno v:
Journal of Applied Spectroscopy. 79:577-582
Results obtained for a one-dimensional model of a single-mode laser and a model with parameters averaged over the resonator volume (point model) were compared. The results for both models agreed only for a high-Q resonator with a uniform distribution
Autor:
L. G. Krylova, L. I. Burov
Publikováno v:
Journal of Applied Spectroscopy. 79:376-381
Output parameters of microchip lasers based on Yb:Er co-doped phosphate glasses have been numerically calculated using a simplified 4-level model in order to optimize the Yb and Er concentrations and active medium length. It was shown that active med
Publikováno v:
Journal of Applied Spectroscopy. 78:733-737
We have used numerical modeling to study the effect of diffusion and fluctuations in the nonequilibrium carrier density in the active layer of injection lasers based on an InAsSb/InAsSbP heterostructure on the angular distribution of the output inten
Publikováno v:
Journal of Applied Spectroscopy. 77:65-72
Various dynamic effects during polarization switching in single-mode semiconductor lasers are examined on the basis of a previously developed approach. This model is found to provide a good description of a wide range of experimentally observed pheno
Publikováno v:
Journal of Applied Spectroscopy. 76:678-684
Based on a previously developed polarization component method, a phenomenological model is constructed for the generation of polarized radiation in single-mode semiconductor lasers and applied to polarization switching. This model gives a good descri
Autor:
A. G. Ryabtsev, A. S. Gorbatsevich, Yu. P. Yakovlev, A. N. Imenkov, Gennadii I. Ryabtsev, L. I. Burov
Publikováno v:
Journal of Applied Spectroscopy. 75:805-809
The spatial distribution of emission intensity in the active layer of a laser diode (LD) based on an InAsSb/InAsSbP heterostructure (generation wavelength λgen ∼ 3.3 µm) is obtained for various stripe widths w by means of numerical solution of th
Autor:
Gennadii I. Ryabtsev, A. S. Gorbatsevich, Yu. P. Yakovlev, L. I. Burov, T. V. Bez'yazychnaya, A. P. Astakhova, A. G. Ryabtsev, M. A. Shchemelev
Publikováno v:
Semiconductors. 42:228-231
The rates of radiative recombination (including transitions induced by enhanced luminescence) and nonradiative recombination, internal quantum yield of luminescence, and the matrix element for band-to-band optical transitions were determined for the
Autor:
M. A. Shchemelev, A. G. Ryabtsev, K.A. Shore, T.V. Bezyazychnaya, L. I. Burov, S. Banerjee, A. S. Gorbatsevich, A. I. Yenzhyieuski, V.V. Bezotosnyi, Gennadii I. Ryabtsev, M. V. Bogdanovich, V.V. Parastchuk
Publikováno v:
Applied Physics B. 90:471-476
It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading