Zobrazeno 1 - 2
of 2
pro vyhledávání: '"L. I. Barabash"'
Autor:
P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik
Publikováno v:
Âderna Fìzika ta Energetika, Vol 9, Iss 2(24), Pp 60-67 (2008)
In given article various methods of the increase of the radiation hardness of semiconductors materials such as silicon and InSb are discussed. Parameters of silicon irradiated by different types and fluences of high energy irradiation and annealed we
Externí odkaz:
https://doaj.org/article/b31887ed828b4ef3b3f9f24444096105
Autor:
A. A. Groza, V. I. Varnina, P. G. Litovchenko, L. S. Marchenko, M. I. Starchik, L. I. Barabash, S. V. Berdnichenko
Publikováno v:
Âderna Fìzika ta Energetika, Vol 9, Iss 2(24), Pp 68-72 (2008)
Infrared absorption spectra of the Silicon single-crystals with the Germanium impurity (Ge ≤ 0,7 at. %) after the irradiation by the reactor neutron fluences of 5 · 10 16 n/cm 2 and 5 · 10 19 n/cm 2 are measured. It was shown that the Germanium i
Externí odkaz:
https://doaj.org/article/5e266f212ebc4bd8853fb92c59bf66d1